Clement Porret received the Engineer degree in physics, with major in component physics, from the Grenoble Institute of Technology, the M.S. degree in micro and nanoelectronics from the University of Grenoble, France, in 2007, and the Ph.D. degree in material science from the University of Grenoble in 2011, with the focus on the growth of Mn-doped Ge nanostructures for spintronics applications. From 2011 to 2015, he was an R&D and a Process Engineer at Riber SA, a Molecular Beam Epitaxy (MBE) tool manufacturer, where he worked on III–V surface engineering and passivation, using a SEMI-compatible 300-mm MBE system connected to the state-of-the-art III–V CMOS Metal Organic Vapor Phase Epitaxy (MOVPE) production cluster. The project also included the deposition of high-K dielectric materials for future logic devices. In 2015, he joined imec as a SiGe Epitaxy Researcher, with the development of solutions for sub-14 nm technology nodes using Reduced-Pressure Chemical Vapor Deposition (RP-CVD) as a main task. Since then, he has been involved in various projects, including the formation of strained channels, the selective epitaxial growth of highly-doped source/drain materials for Si and Ge fin and gate-all-around field-effect transistors, the synthesis of graphene on Si compatible platforms, and the fabrication of integrated electro-absorption modulators.