Philippe Matagne - Mission College, Intel Corporation

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Modeling of emergent solid state devices

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论文共 112 篇作者统计合作学者相似作者

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Assessment and Optimization of the Cascaded Transistor Method for the Direct Extraction of Access Resistance Components in FinFET and NSFET Devices

Pierre Eyben,An De Keersgieter,Philippe Matagne,Hans Mertens,Thomas Chiarella, Porret,Camila Toledo de Carvalho Cavalcante,Yong Kong Siew,Jerome Mitard,Naoto Horiguchi

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)

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Exploring GAA-Nanosheet, Forksheet and GAA-Forksheet Architectures: a TCAD-DTCO Study at 90 Nm & 120 Nm Cell Height

Gautam Gaddemane,Pieter Schuddinck, Krishna Bhuwalka,Gerhard Rzepa,Gioele Mirabelli,Anshul Gupta,Jürgen Bömmels,Philippe Matagne,Dmitry Yakimets, Hao Wu, Lei Hou,Geert Hellings,Changze Liu

IEEE Journal of the Electron Devices Societyno. 99 (2024): 1-1

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(Invited) Advanced Compute Scaling: A New Era of Exciting, Sustainability-Aware Innovations with Nanosheet-Based Devices, Increased Interdisciplinary Synergies, and (r)evolution Towards Higher Versatility

Anabela Veloso,Geert Eneman,Bjorn Vermeersch,Philippe Matagne,Roger Loo,Kateryna Serbulova,Shih-Hung Chen, Naoto Horiguchi,Julien Ryckaert

ECS Transactionsno. 2 (2024): 13-24

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Monolithic-CFET with Direct Backside Contact to Source/Drain and Backside Dielectric Isolation

A. Vandooren, K. Stiers, C. Sheng,C. Toledo de Carvalho Cavalcante,M. Hosseini,D. Batuk, A. Peng, X. Zhou,H. Mertens,A. Veloso, A. Mingardi, S. Sarkar Kumar, R. Kumar Saroj,K. D'havé,T. Chiarella,J. Bömmels,R. Loo,E. Rosseel,C. Porret, Y. Shimura, A. Akula,S. Choudhury,V. Brissonneau,E. Dupuy, T. Sarkar,A. Peter,N. Jourdan,J.P. Soulie,K. Vandersmissen,S. Iacovo,D. Montero,E. Vrancken,F. Sebaai,P. Puttarame Gowda, K. Lai,N. Buccheri,P. Matagne,B. T. Chan, A. Sepulveda Marquez,R. Langer, I. Gyo Koo,E. Altamirano Sanchez,K. Devriendt,F. Lazzarino,J. Mitard,J. Geypen,E. Grieten, Y-F. Chen, F. Verbeek, H. Pollenus,J. Heijlen,L.P.B. Lima,F. Holsteyns, S. Subramanian,N. Horiguchi,S. Demuynck,S. Biesemans

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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Temperature Dependence of Quasi–Ballistic Transport in N–type and P–type Nanosheets

F. M. Bufler,B. Vermeersch, S. Mishra, A. Beckers,R. Ritzenthaler,A. Grill,P. Matagne,G. Hellings

2024 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE, LAEDC (2024)

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DTCO of Nanosheet and Forksheet Architectures: Exploring Dielectric Walls, Contacting Schemes, and Active Regions for Optimized RO Performance

Gautam Gaddemane,Pieter Schuddinck, Krishna Bhuwalka,Gerhard Rzepa,Gioele Mirabelli,Philippe Matagne,Dmitry Yakimets,Hao Wu,Geert Hellings,Changze Liu

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.226-228, (2024)

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Predictive and Prospective Calibrated TCAD to Improve Device Performances in Sub-20 Nm Gate Length P-Finfets

Pierre Eyben,An De Keersgieter,Philippe Matagne,Thomas Chiarella,Clement Porret,Andriy Hikavyy,Yong Kong Siew,Ludovic Goux,Jerome Mitard,Naoto Horiguchi

Japanese Journal of Applied Physicsno. 4 (2024): 04SP03-04SP03

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Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

T. Chiarella,P. Matagne,H. Mertens,M. Hosseini, X. Zhou,P. Eyben,H. Arimura,A. Gupta,O. Richard,C. Drijbooms,R. Caluwaerts,N. Horiguchi,J. Mitard

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.16-18, (2024)

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Comprehensive DTCO-Driven Power and Performance Optimization in Nanosheet and Forksheet Architectures: Influence of Dielectric Walls, Active Widths, and Power Delivery Methods

Gautam Gaddemane,Pieter Schuddinck, Krishna Bhuwalka,Gerhard Rzepa,Gioele Mirabelli,Anshul Gupta,Jürgen Bömmels,Philippe Matagne,Dmitry Yakimets,Hao Wu, Lei Hou,Geert Hellings, Changze Liu

crossref（2024）

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Direct Extraction of Contact and S/D Epi Access Resistance Components on 45nm Gate Pitch NS-Based N-Fet Devices for the 2nm Node

P. Eyben, A. Pondini,A. De Keersgieter, H. Arimura,H. Mertens,T. Chiarella,C. Porret,E. Rosseel, R. Sarkar, M. Hosseini, X. Zhou, L. Wouters,P. Matagne,J. Mitard,N. Horiguchi

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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