h v meer - GLOBALFOUNDRIES | 人才画像

基本信息

浏览量：0

职业迁徙

个人简介

暂无内容

研究兴趣

论文共 9 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

An Application of the Linear Errors-In-Variables Model in Semiconductor Device Performance Assessment

Necip Doganaksoy,Hans van Meer

Quality engineering（2015）

引用2浏览0引用

Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

Mitsuhiro Togo, Madhura Joshi,H V Meer,Yanbing Liu, Cao Yong, Bao Liu,Xiangning He,Xiaojie Wu,Seong Yeol Mun,Xiaobing Zhang, D Konduparthi, Jie Lian,G Bohra, W H Tong, C Y Xiao,Dina H Triyoso,Edmund Kenneth Banghart,Shesh Mani Pandey, Airong Wei,R Pal,R G Carter,Min Hee Nam,M Eller,Srikanth B Samavedam

VLSI Technology（2014）

引用1浏览0EIWOS引用

METHODS OF FORMING BULK FINFET DEVICES WITH REPLACEMENT GATES SO AS TO REDUCE PUNCH THROUGH LEAKAGE CURRENTS

Yanxiang Liu,Michael Hargrove, Xiaodong Yang,H V Meer,Laegu Kang,Christian Gruensfelder,Srikanth B Samavedam

mag（2013）

引用25浏览0引用

NFET effective work function improvement via stress memorization technique in replacement metal gate technology

Y. Liu,H. V. Meer,Oleg Gluschenkov, X. Yang,F. Sato, Kyung-hwan Cho, Michael Ganz,Henry K. Utomo, Y. Wang,Unoh Kwon,H. Kothari,W. Mcmahon,Suresh Uppal,M. Jin,C. Tian,W. Lai,Ravikumar Ramachandran,Emmanuel Josse,Sameer H. Jain,Vijay Narayanan,Manfred Eller,Srikanth Samavedam,H. Shang,R. Divakaruni

symposium on vlsi technology（2013）

引用23浏览0EIWOS引用

New layout dependency in high-k/Metal Gate MOSFETs

M Hamaguchi,Deleep R Nair,D Jaeger,Hideo Nishimura, Wei Li,Mh Na,C Bernicot,Jing Liang, K Stahrenberg,Kyungmin Kim,M Eller,Kc Lee,Takeshi Iwamoto,Yw Teh,Seiichi Mori,Yoshio Takasu,Jong Hwan Park, Li Song,Ns Kim,S Kohler,H Kothari,Jp Han, Shogo Miyake,H V Meer,F Arnaud,K Barla,M Sherony,Ricardo A Donaton,Mehmet Celik,K Miyashita,Vijay Narayanan,R A Wachnik,Michael P Chudzik,J Sudijono,J H Ku, J D Kim,Makoto Sekine, Scott A Johnson,W Neumueller,R Sampson,E Kaste,R Divakaruni,F Matsuoka

Electron Devices Meetingpp.25.6.1-25.6.4, (2011)

引用6浏览0EIWOS引用

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

Baohua Yang,R Takalkar,Z Ren,Lachlan E Black,A Dube,J W Weijtmans, Jian Li,Jeffrey B Johnson,Johnathan E Faltermeier,Arun Madan,Ziming Zhu,A Turansky,Guangrui Xia,Ashima B Chakravarti,R Pal,Kaiwing Chan,Alexander Reznicek,Thomas N Adam,J P De Souza,Eric C T Harley, Barry R Greene,A R Gehring, Mei Cai,D Aime, S Sun,H V Meer, Judson R Holt,D Theodore,S Zollner,P Grudowski,Devendra K Sadana,D G Park,D Mocuta, Dominic J Schepis,E Maciejewski,S Luning,J Pellerin,Effendi Leobandung

San Francisco, CA（2008）

引用35浏览0EIWOS引用

Stress Dependence and Poly-Pitch Scaling Characteristics of (110) PMOS Drive Current

B. (Frank) Yang, K. Nummy,A. Waite,L. Black,H. Gossmann,H. Yin, Y. Liu,B. Kim,S. Narasimha,P. Fisher,H. V. Meer,J. Johnson,D. Chidambarrao, S. D. Kim,C. Sheraw,D. Wehella-gamage,J. Holt, X. Chen,D. Park,C. Y. Sung, D. Schepis,M. Khare, S. Liming,P. Agnello

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS（2007）

引用23浏览0EIWOS引用

High Performance 65 Nm Soi Technology with Dual Stress Liner and Low Capacitance Sram Cell

E Leobandung,H Nayakama,D Mocuta,K Miyamoto,M Angyal,HV Meer,K McStay,I Ahsan,S Allen,A Azuma,M Belyansky,RV Bentum, J Cheng,D Chidambarrao,B Dirahoui,M Fukasawa,M Gerhardt,M Gribelyuk,S Halle, H Harifuchi,D Harmon, J Heaps-Nelson,H Hichri,K Ida,M Inohara, K Inoue,K Jenkins,T Kawamura,B Kim, SK Ku, M Kumar, S Lane,L Liebmann, R Logan,I Melville, K Miyashita, A Mocuta,P O'Neil,MF Ng, T Nogami, A Nomura, C Norris,E Nowak, M Ono,S Panda,C Penny,C Radens,R Ramachandran,A Ray,SH Rhee,D Ryan, T Shinohara,G Sudo, F Sugaya,J Strane,Y Tan,L Tsou, L Wang,F Wirbeleit, S Wu,T Yamashita,H Yan, Q Ye, D Yoneyama,N Zamdmer, H Zhong, H Zhu, W Zhu,P Agnello,S Bukofsky,G Bronner,E Crabbe,G Freeman,SF Huang, T Ivers, H Kuroda,D McHerron,J Pellerin,Y Toyoshima,S Subbanna,N Kepler, L Su

2005 Symposium on VLSI Technology, Digest of Technical Papers（2005）

引用81浏览0EIWOS引用

The Noise in Submicron SOI MOSFETs With 2.5 nm Nitrided Gate Oxide

N B Lukyanchikova,M V Petrichuk,N Garbar,E Simoen,A Mercha,C Claeys,H V Meer,K De Meyer

mag（2002）

引用25浏览0引用

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn