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个人简介
Franck Arnaud (franck.arnaud@st.com) joined STMicroelectronics, Crolles, France, in 1995 after graduating with a master’s degree in electronics from the Superior School of Electricity, Paris, France. He started his career as a front-end-of-line engineer responsible for the ramp-up of ${0.35}-{u}$m complementary metal–oxide–semiconductor technology. In 2008, he spent two and half years as the 32- and 28-nm devices manager in the Fishkill, New York, area working in an ISDA Semiconductors alliance led by IBM. In 2010, he moved back to the Crolles site in France as director of the 28-nm program development for both bulk and fully depleted silicon-on-insulator (FD-SOI) technologies. Since 2016, he has been managing the 28-nm FD-SOI embedded nonvolatile memory technology research and development program.
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论文共 110 篇作者统计合作学者相似作者
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crossref(2024)
Solid-State Electronics (2023)
Antonino Conte, Francesco Tomaiuolo,Marco Ruta,Andrea Redaelli,Franck Arnaud, Thomas Jouanneau, Christian Boccaccio,Olivier Weber
2023 IEEE International Memory Workshop (IMW)pp.1-4, (2023)
T. Mota-Frutuoso,V. Lapras,L. Brunet,L. Basset,J. Lugo,C. Fenouillet-Beranger,M. Vinet,D. Lattard,F. Boulard, Y. Exbraya, D. Boutry,O. Billoint,D. Bosch, Y. Maneglia,A. Peizerat, S. Dumas,G. Sicard,S. Kerdiles,J. Kanyandekwe,P. Sideris,V. Mazzocchi,A. Sarrazin,V. Loup,G. Mauguen,C. Morales,P. Acosta Alba,V. Balan,C. Perrot,J. Sturm,C. Euvrard,F. Aussenac, A. Janaud,J-D. Chapon,M. Guillermet, S. Guglieri, F. Bailly, P. Toresani,F. Fournel,M. Mouhdach, A. Berthoud,L-L. Chapelon,M. Ribotta,F. Ponthenier, A. Magalhaes,S. Maitrejean, C. Moulin,J. Michailos,F. Arnaud,A. Cathelin,J. Arcamone,F. Andrieu,X. Garros,F. Gaillard,P. Batude.
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
Olivier Weber,Doohong Min,Alexandre Villaret,Jinha Park,Ilmin Lee,Eric Vandenbossche, Dohun Kim,Jiyoung Yun,Jinwoo Park,Minuk Lee,Jinseok Kang,Hyunjong Lee,Youngju Choi,Inhwan Kim,Joochan Kim, Dhori Kedar Janardan,Sebastien Haendler, Salim Elghouli,Sophie Puget,Christophe Bernicot,Emilie Bernard,Francois Wacquant, Fabien Nimsgern,Joonhyuk Choi,Shigenobu Maeda,Jongho Lee,Franck Arnaud
A. Redaelli,A. Gandolfo,G. Samanni,E. Gomiero,E. Petroni,L. Scotti,A. Lippiello,P. Mattavelli,J. Jasse,D. Codegoni,A. Serafini,R. Ranica,C. Boccaccio,J. Sandrini,R. Berthelon,J-C Grenier,O. Weber,D. Turgis,A. Valery,S. Del Medico,V Caubet,J-P Reynard,D. Dutartre,L. Favennec,A. Conte,F. Disegni,M. De Tomasi,A. Ventre,M. Baldo,D. Ielmini,A. Maurelli,P. Ferreira,F. Arnaud,F. Piazza,P. Cappelletti,R. Annunziata,R. Gonella
A. Redaelli,A. Gandolfo,G. Samanni,E. Gomiero,E. Petroni,L. Scotti,A. Lippiello,P. Mattavelli,J. Jasse,D. Codegoni,A. Serafini,R. Ranica,C. Boccaccio,J. Sandrini,R. Berthelon,Jc Grenier,O. Weber,D. Turgis,A. Valery,S. Del Medico,V Caubet,Jp Reynard,D. Dutartre,L. Favennec,A. Conte,F. Disegni,M. De Tomasi,A. Ventre,M. Baldo,D. Ielmini,A. Maurelli,P. Ferreira,F. Arnaud,F. Piazza,P. Cappelletti,R. Annunziata,R. Gonella
R. Ranica,R. Berthelon,A. Gandolfo,G. Samanni,E. Gomiero,J. Jasse,P. Mattavelli,J. Sandrini,M. Querre,Y. Le-Friec,J. Poulet,V. Caubet,L. Favennec,C. Boccaccio,G. Ghezzi,C. Gallon,JC. Grenier,B. Dumont,O. Weber,A. Villaret,R. Beneyton,N. Cherault,D. Ristoiu,S. Del Medico,O. Kermarrec,JP. Reynard,P. Boivin,A. Souhaite,L. Desvoivres,S. Chouteau,PO. Sassoulas,L. Clement,A. Valery,E. Petroni,D. Turgis,A. Lippiello,L. Scotti,F. Disegni,A. Ventre,D. Ornaghi,M. De Tomasi,A. Maurelli,A. Conte,F. Arnaud,A. Redaelli,R. Annunziata,P. Cappelletti,F. Piazza,P. Ferreira,R. Gonella,E. Ciantar
2021 IEEE International Electron Devices Meeting (IEDM)pp.28.1.1-28.1.4, (2021)
Doohong Min, Jinha Park,Olivier Weber,Francois Wacquant,Alexandre Villaret,Eric Vandenbossche,Franck Arnaud,Emilie Bernard, Salim Elghouli, Christian Boccaccio,Laurent Favennec,Roberto Gonella, Jean Galvier,Jiyoung Yun,Jinwoo Park,Minuk Lee, Pyeongjun Yoon,Ilmin Lee, Heaseok Seo, Hoonsung Choi, Changbong Oh,Jinseok Kang,Sewan Park,Hyunjong Lee,Youngju Choi, Inwhan Kim, Joohyun Jo, Yoonsoo Park,Jinchan Park, Youngja Lee, Jinhyeok Jung, Juwon Lee, Hana Jang,Jihun Kang, Jisoo Kwon,Joochan Kim,Shigenobu Maeda,Youngki Hong
2021 IEEE International Electron Devices Meeting (IEDM) (2021)
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作者统计
#Papers: 110
#Citation: 2183
H-Index: 23
G-Index: 44
Sociability: 7
Diversity: 0
Activity: 1
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