Edmund Banghart - Quality and Reliability, GLOBALFOUNDRIES

International Symposium for Testing and Failure AnalysisISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis (2019)

引用0浏览0引用

Design Optimization and Modeling of Charge Trap Transistors (ctts) in 14 Nm FinFET Technologies

Faraz Khan, Min Soo Han,Dan Moy,Robert Katz,Liu Jiang,Edmund Banghart,Norman Robson,Toshiaki Kirihata,Jason C. S. Woo,Subramanian S. Iyer

IEEE ELECTRON DEVICE LETTERS（2019）

引用17浏览0EIWOS引用

14-Nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

Eric Hunt-Schroeder,Darren Anand,John Fifield,Michael Roberge,Dale Pontius,Mark Jacunski,Kevin Batson, Matthew Deming,Faraz Khan,Dan Moy,Alberto Cestero,Robert Katz,Zakariae Chbili,Edmund Banghart,Liu Jiang,Balaji Jayaraman,Rajesh R. Tummuru,Ramesh Raghavan, Amit Mishra,Norman Robson,Toshiaki Kirihata

IEEE solid-state circuits lettersno. 12 (2018): 233-236

引用5浏览0EIWOS引用

Influence of Stress Induced CT Local Layout Effect (LLE) on 14nm FinFET

Pei Zhao,Shesh Mani Pandey,Edmund Banghart,Xiaoli He,Ram Asra, Vinayak Mahajan,Haojun Zhang,Baofu Zhu, Kenta Yamada,Linjun Cao,Pala Balasubramaniam,Manoj Joshi,Manfred Eller,Francis Benistant,Srikanth Samavedam

Symposium on VLSI Technology（2017）

引用16浏览0EIWOS引用

Enhanced Nfinfet ESD Performance

Jian-Hsing Lee,Manjunatha Prabhu,Natarajan Mahadeva Iyer,Edmund Banghart,You Li, Ronghua Yu, Richard Poro, Nicholas Hogle, Ephrem Gebreselaie,Shesh Mani Pandey,Robert Gauthier

2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)（2017）

引用3浏览0EIWOS引用

Extraction of parasitic and channel resistance components in FinFETs using TCAD tools

Sudarshan Narayanan,Edmund Banghart,Peter Zeitzoff,Konstantin Korablev,Shesh Mani Pandey,Amaury Gendron-Hansen,Francis Benistant

Solid-State Electronics（2016）

引用9浏览0引用

Contact model based on TCAD-experimental interactive algorithm

Peijie Feng,Jiseok Kim,Jin Cho,Shesh Mani Pandey,Sudarshan Narayanan, Michelle Tng,Bingwu Liu,Edmund K Banghart,Baofu Zhu,Pei Zhao, Muhammad Mahboob Ur Rahman,Yumi Park, Liu Jiang,F Benistant

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2015）

引用2浏览0EIWOS引用

Fabricating fin-type field effect transistor with punch-through stop region

Edmund Kenneth Banghart, Yanxiang Liu,Shesh Mani Pandey

mag（2015）

引用23浏览0引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn