Elena Capogreco - imec | 人才画像

基本信息

浏览量：19

职业迁徙

个人简介

暂无内容

研究兴趣

论文共 49 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor

R. Sarkar,R. Ritzenthaler,J. Everaert,P. Eyben,K. Sankaran,C. Porret, P. Gupta,J. Ganguly,H. Arimura,J. Geypen,E. Capogreco, S. Roh,V. Machkaoutsan,L. PB. Lima, M-S. Kim,A. Spessot,N. Horiguchi

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

引用0浏览0EIWOS引用

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics

J. P. Bastos,B. J. O'Sullivan,Y. Higashi,A. Chasin,J. Franco,H. Arimura,J. Ganguly,E. Capogreco,A. Spessot,N. Horiguchi

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

引用0浏览0EIWOS引用

DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based Pwfm for Sub-10Nm DRAM

J. Ganguly,Hiroaki Arimura,Romain Ritzenthaler, H. Bana,J. W. Maes, J. G. Lai,S. Brus, W. Maqsood,R. Sarkar, B. Kannan,Elena Capogreco,V. Machkaoutsan, S. Yoon,Alessio Spessot,M. Givens,Naoto Horiguchi

Symposium on VLSI Technologypp.1-2, (2024)

引用0浏览0EIWOS引用

Compact Thermally Stable High Voltage FinFET with 40 Nm Tox and Lateral Break-Down >35 V for 3D NAND Flash Periphery Application

A. Spessot,P. Matagne,H. Arimura,J. Ganguly,R. Ritzenthaler,J. Bastos,R. Sarkar,E. Capogreco,Y. Chen,N. Horiguchi

Japanese Journal of Applied Physicsno. 3 (2024)

引用0浏览0引用

Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study

Camila Cavalcante,H. Arimura,Y. Oniki,F. Sebaai,E. Capogreco,L-A. Ragnarsson,B.T. Chan,A. Hikavyy,H. Mertens,K. Vandersmissen,E. Dentoni Litta,S. Subramanian,S. Biesemans,N. Horiguchi

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

引用0浏览0引用

Thermally Stable, Packaged Aware LV HKMG Platforms Benchmark to Enable Low Power I/O for Next 3D NAND Generations

Alessio Spessot,Shairfe Muhammad Salahuddin, Ricardo Escobar,Romain Ritzenthaler,Yang Xiang, Rahul Budhwani,Eugenio Dentoni Litta,Elena Capogreco,Joao Bastos,Yangyin Chen,Horiguchi Naoto

IMWpp.1-4, (2022)

引用2浏览0EIWOS引用

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery

Joao Bastos,Barry O'Sullivan,Jacopo Franco,Stanislav Tyaginov,Brecht Truijen,Adrian Chasin,Robin Degraeve,Ben Kaczer,Romain Ritzenthaler,Elena Capogreco,Eugenio Dentoni Litta,Alessio Spessot,Yusuke Higashi,Younggwang Yoon,Vladimir Machkaoutsan,Pierre Fazan,Naoto Horiguchi

2022 IEEE International Reliability Physics Symposium (IRPS) (2022)

引用2浏览0EIWOS引用

NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 Pfinfets

Duan Xie,Eddy Simoen,Hiroaki Arimura,Elena Capogreco,Jerome Mitard,Naoto Horiguchi

IEEE Transactions on Electron Devices（2022）

引用0浏览0EIWOS引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn