Gil-Shin Moon - Samsung Elect, Kyeonggi Do 445701, South Korea

基本信息

Career Trajectory

Bio

Gil-Shin Moon was born in Chungchen-Do, Korea, in 1966. He received the B.S. degree in electrical engineering from Soongsil University, Korea, in 1995. He joined LG Semiconductor, Chungju, Korea, in 1995, where he worked on DRAM design. Since 2003, he has worked for Samsung Electronics as a Principal Engineer of the DRAM design division. He is currently involved in the development of high-speed graphic memories.

Research Interests

Papers共 13 篇Author StatisticsCo-AuthorSimilar Experts

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Semiconductor memory device supporting read data bus inversion function and method of testing the semiconductor memory device

Gilshin Moon

mag（2012）

Cited23Views0Bibtex

２．５ｎｓバンクツーバンクアクティブ時間を持ちバンクグループ制限の無い７Ｇｂ／ｓ／ｐｉｎＧＤＤＲ５ＳＤＲＡＭ

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mag（2010）

Cited23Views0Bibtex

Majority voter circuits and semiconductor devices including the same

Seungjun Bae,Jeongdon Lim,Gilshin Moon,Kwangil Park

mag（2010）

Cited25Views0Bibtex

多面的クロッキングとISI/SSN-低減技術を用いた60nm 6Gb/s/pin GDDR5グラフィックスDRAM

International Solid-State Circuits Conferencepp.278-279, (2008)

Cited0Views0Bibtex

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