Moo-Sung Kim

Moo-Sung Kim received the B.S. degree in electronic engineering from Yeungnam University, Gyeongsan, South Korea, in 1998, and the M.S. degree in electronic engineering from the Pohang University of Science and Technology, Pohang, South Korea, in 2000. He joined Samsung Electronics Co., Ltd., Hwaseong, South Korea, as an SRAM Device Engineer. In 2003, he became a nand Flash Designer, where he was involved in the development of 70-, 50-, 30-, and 20-nm class planar nand flash. He is currently a Principal Engineer with Samsung Electronics Co., Ltd. His current research interests include 10-nm class planar nand and vertical nand flash memory for high performance and low power.