Hyun-Jin Kim

Hyun-Jin Kim received the B.S. degree from Ewha Womans University, Seoul, South Korea, in 1999, the M.S. degree from the Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea, in 2001, and the Ph.D. degree from The University of Texas at Austin, USA, in 2012, all in electrical engineering. She joined Samsung Electronics Company, Hwasung, South Korea, in 2003. From 2003 to 2008, she was involved in the design of high-speed graphics DRAMs. Since 2012, she has been involved in NAND flash memory design. Her current research interests include high-speed CMOS interface circuits, clocking circuits, and signal integrity.