Huiming Bu

Huiming M. Bu received the B.S. degree in applied physics from Nanjing University, China, in 1997 and the M.S. degree in electrical engineering from Yale University, New Haven, CT. He is currently pursuing the Ph.D. degree in electrical engineering at Yale University. His research interests are focused on high-${\kappa}$ gate dielectric characterization. He is currently engaged in the reliability study of Hf-based gate dielectrics, including trapping-induced threshold voltage instability, dielectric breakdown, mobility degradation, and other reliability issues. He was an intern at IBM, Fishkill, NY, in summer 2002 and 2003, working on gate dielectric projects.