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Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors

Curtis Durfee,Subhadeep Kal,Shanti Pancharatnam,Maruf Bhuiyan, Ivo Otto IV,Matthew Flaugh,Jeffrey Smith,Daniel Chanemougame,Cheryl Alix,Huimei Zhou,Julien Frougier,Andrew Greene,Michael Belyansky,Koji Watanabe,Jingyun Zhang,Daniel Schmidt,Mary Breton, Kai Zhao,Miaomiao Wang,Veeraraghavan Basker,Aelan Mosden,Nicolas Loubet,Dechao Guo,Peter Biolsi,Bala Haran,Huiming Bu

ECS transactions（2021）

Cited 2|Views3
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Key words
Metal Gate Transistors,High-Performance Nanoscale Devices,Double-Gate Transistors,Strained-Silicon Technology,Nanowire Transistors
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