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Tzu-Chiang Chen received the Ph.D. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 2006.
In 2006, he joined Taiwan Semiconductor Manufacturing Company (TSMC) Ltd., Hsinchu, Taiwan, as a Principal Engineer, engaged in the research and development of advanced transistor integration and simulation, where he was promoted to a Manager at the Advanced Technology Research Division in 2010. Since 2017, he has been serving as a Program Manager, in charge of the advanced transistor research and leading the Cooperate Research High Density Memory Team to establish high capacity/density/bandwidth nonvolatile memory with a 3-D architecture. Since 2006, he has held more than 40 U.S. patents.
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论文共 11 篇作者统计合作学者相似作者
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2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)
International Reliability Physics Symposium (2022)
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K.-Y. Hsiang,C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou,C.-Y. Lin,J.-Y. Lee,F.-S. Chang, Z.-X. Li,H.-C. Tseng,C.-C. Wang, W.-C. Ray,T.-H. Hou,
2022 IEEE International Reliability Physics Symposium (IRPS) (2022)
Chun-Yu Liao,Kuo-Yu Hsiang,Zhao-Feng Lou,Chen-Ying Lin, Yi-Ju Tseng, Han-Chen Tseng, Zhi-Xian Li, Wei-Chang Ray, Fu-Sheng Chang,Chun-Chieh Wang,Tzu-Chiang Chen,Chih-Sheng Chang,
2021 IEEE International Electron Devices Meeting (IEDM)pp.8.6.1-8.6.4, (2021)
Hung-Li Chiang,Jui-Jen Wu,Chen-Han Chou, Yen-Fu Hsiao, Yi-Chun Chen, Leo Liu,Jer-Fu Wang,Tzu-Chiang Chen,Pei-Jun Liao,Jin Cai,Xinyu Bao, Alan Cheng,
2021 IEEE International Electron Devices Meeting (IEDM)pp.13.2.1-13.2.4, (2021)
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