C.-C. Wang - Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University

基本信息

浏览量：0

职业迁徙

个人简介

暂无内容

研究兴趣

论文共 12 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array

H. -L. Chiang, J.-F. Wang,K. -H. Lin, C.-H. Nien,J. -J. Wu,K.-Y. Hsiang,C. -P. Chuu,Y.-W. Chen, X. W. Zhang,C. W. Liu,Tahui Wang,C. -C. Wang,

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2022)

引用1浏览0引用

Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang,Y. C. Chen,F. S. Chang,C. Y. Lin,C. Y. Liao, Z. F. Lou,J. Y. Lee, W. C. Ray, Z. X. Li,C. C. Wang,H. C. Tseng,P. H. Chen,

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

引用1浏览0引用

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf_0.1Zr_0.9O₂

C.-Y. Liao,K.-Y. Hsiang,C.-Y. Lin, Z.-F. Lou,Z.-X. Li,H.-C. Tseng,F.-S. Chang, W.-C. Ray,C.-C. Wang,J.-Y. Lee, P.-H. Chen, J.-H. Tsai,

IEEE Electron Device Letters（2022）

引用0浏览0引用

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. -L. Chiang, J.-F. Wang, K. -H. Lin, C.-H. Nien,J. -J. Wu, K.-Y. Hsiang, C. -P. Chuu,Y.-W. Chen, X. W. Zhang,C. W. Liu,Tahui Wang,C. -C. Wang,

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.361-362, (2022)

引用1浏览0EIWOS引用

Correlation between Access Polarization and High Endurance (~ 10 12 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO 2

K.-Y. Hsiang,C.-Y. Liao,Y.-Y. Lin, Z.-F. Lou,C.-Y. Lin,J.-Y. Lee,F.-S. Chang, Z.-X. Li,H.-C. Tseng,C.-C. Wang, W.-C. Ray,T.-H. Hou,

2022 IEEE International Reliability Physics Symposium (IRPS)pp.P9-1-P9-4, (2022)

引用3浏览0EIWOS引用

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂

C.-Y. Liao,K.-Y. Hsiang,C.-Y. Lin, Z.-F. Lou,Z.-X. Li,H.-C. Tseng, F.-S. Chang, W.-C. Ray,C.-C. Wang,J.-Y. Lee, P.-H. Chen,J.-H. Tsai,

IEEE Electron Device Letters（2022）

引用2浏览0EIWOS引用

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao, K.-Y. Hsiang, Z. -F. Lou,H.-C. Tseng,C.-Y. Lin,Z.-X. Li,F.-C. Hsieh,C.-C. Wang,F.-S. Chang, W.-C. Ray,Y.-Y. Tseng,S. T. Chang,

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2022)

引用4浏览0引用

Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10(9) cycles for Multibit NVM

C. -Y. Liao, Z. -F. Lou,C. -Y. Lin,A. Senapati, R. Karmakar,K. -Y. Hsiang, Z. -X. Li, W. -C. Ray,J. -Y. Lee, P. -H. Chen,F. -S. Chang, H. -H. Tseng,

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

引用0浏览0引用

Correlation between Access Polarization and High Endurance (similar to 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2

K-Y. Hsiang,C-Y. Liao, Y-Y. Lin,Z-F. Lou, C-Y. Lin,J-Y. Lee,F-S. Chang,Z-X. Li,H-C. Tseng,C-C. Wang,W-C. Ray,M. H. Lee,

International Reliability Physics Symposium (2022)

引用0浏览0引用

Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM

C.-Y. Liao, Z.-F. Lou,C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray,J.-Y. Lee, P.-H. Chen,F.-S. Chang, H.-H. Tseng,

2022 International Electron Devices Meeting (IEDM)pp.36.6.1-36.6.4, (2022)

引用0浏览0EIWOS引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn