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(Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires

H. Mertens,R. Ritzenthaler,A. Hikavyy,M. S. Kim,Z. Tao,K. Wostyn,T. Schram,E. Kunnen,L. -A. Ragnarsson,H. Dekkers,T. Hopf,K. Devriendt,D. Tsvetanova,S. A. Chew,Y. Kikuchi,E. Van Besien,E. Rosseel,G. Mannaert,A. De Keersgieter,A. Chasin,S. Kubicek,A. Dangol,S. Demuynck,K. Barla,D. Mocuta,N. Horiguchi

Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)（2017）

Cited 9|Views11
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Key words
Metal Gate Transistors,Double-Gate Transistors,Nanowire Transistors,High-Performance Nanoscale Devices,Nanosensors
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