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个人简介

Theodore M. Levin received the B.S. degree in physics from the University of Massachusetts, Amherst, in 1990, and the M.S. degree in physics and the M.S.E.E. degree in electrical engineering from Ohio State University, Columbus, in 1994 and 1999, respectively. In 1999, he joined the IBM Microelectronics Systems and Technology Group, Essex Junction, VT, where he is currently a Staff Engineer. He has authored several articles in the fields of semiconductor materials characterization, failure analysis, and reliability and holds three U.S. patents. His current research activities include improvements and applications of laser signal injection microscopy.

研究兴趣

论文共 14 篇作者统计合作学者相似作者

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Vertical-Transport Nanosheet Technology for CMOS Scaling Beyond Lateral-Transport Devices

H. Jagannathan,B. Anderson,C-W Sohn,G. Tsutsui,J. Strane,R. Xie,S. Fan,K- Kim,S. Song,S. Sieg,I Seshadri,S. Mochizuki,J. Wang,A. Rahman, K-Y Cheon,I Hwang,J. Demarest,J. Do, J. Fullam, G. Jo, B. Hong,Y. Jung, M. Kim, S. Kim, R. Lallement,T. Levin, J. Li,E. Miller, P. Montanini,R. Pujari, C. Osborn,M. Sankarapandian,G-H Son,C. Waskiewicz,H. Wu,J. Yim, A. Young,C. Zhang, A. Varghese,R. Robison,S. Burns, K. Zhao, T. Yamashita,D. Dechene,D. Guo,R. Divakaruni,T. Wu,K- Seo,H. Bu

2021 IEEE International Electron Devices Meeting (IEDM) (2021)

引用12浏览0EIWOS引用

A 14 nm Embedded STT-MRAM CMOS Technology

D. Edelstein,M. Rizzolo,D. Sil,A. Dutta,J. DeBrosse, M. Wordeman,A. Arceo, I. C. Chu,J. Demarest,E. R. J. Edwards, E. R. Evarts, J. Fullam,A. Gasasira,G. Hu, M. Iwatake, R. Johnson, V Katragadda,T. Levin, J. Li,Y. Liu, C. Long,T. Maffitt,S. McDermott,S. Mehta, V Mehta,D. Metzler,J. Morillo, Y. Nakamura,S. Nguyen, P. Nieves, V Pai,R. Patlolla,R. Pujari,R. Southwick,T. Standaert,O. van der Straten,H. Wu,C-C Yang,D. Houssameddine, J. M. Slaughter,D. C. Worledge

2020 IEEE International Electron Devices Meeting (IEDM)（2020）

引用25浏览0EIWOS引用

Failure Isolation in Ring Oscillator Circuit and Defect Detection in CMOS Technology Research

Victor Chan,M. Bergendahl,J. Strane,B. Austin, C. Boye, S. Mattam,S. Choi,A. Gaul,K. Cheng,A. Greene,D. Lea,T. Levin,G. Karve,S. Teehan,D. Guo

2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2019）

引用2浏览0EIWOS引用

Leakage Aware Si/SiGe CMOS FinFET for Low Power Applications

Gen Tsutsui,Curtis Durfee, Miaomiao Wang,Aniruddha Konar,Heng Wu,Shogo Mochizuki,Ruqiang Bao,Stephen Bedell, Juntao Li,Huimei Zhou,Daniel Schmidt, Chun Ju Yang,James Kelly,Koji Watanabe,Theodore Levin,Walter Kleemeier,Dechao Guo,Devendra Sadana,Dinesh Gupta,Andreas Knorr,Huiming Bu

2018 IEEE Symposium on VLSI Technology（2018）

引用4浏览0EIWOS引用

低電力応用のための漏れを意識したSi/SiGe CMOS FinFET【JST・京大機械翻訳】

Gen Tsutsui,Curtis Durfee, Miaomiao Wang,Aniruddha Konar, Heng Wu, Seibu Mochizuki,Ruqiang Bao, Bruce Stephen, Juntao Li, Zhou Huimei,Schmidt Daniel, Jie Yang, Kelly James,Kôji Watanabe,Levin Theodore,Walter Kleemeier, Dechao Guo, S Gurjar Devendra, Divya Gupta, Andreas Knorr, H. Bu

IEEE Conference Proceedings (2018): 87-88

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Fdsoi Cmos Devices Featuring Dual Strained Channel and Thin Box Extendable to the 10nm Node