Sebastian Engelmann

Sebastian Engelmann was born in Lichtenfels, Germany. He received the Vordiplom degree in physics from the University of Würzburg, Würzburg, Germany, in 2003, and the Ph.D. degree in materials science and engineering from the University of Maryland, College Park, MD, USA, in 2008. In 2008, he joined the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA. He joined the Advanced Plasma Processing Group, IBM T. J. Watson Research Center, where he developed plasma etch processes to support future device generations for exploratory CMOS device research and devices beyond the CMOS era. His main research activities are developing plasma processes that enable the integration of Trigate and Nanowire device geometries, novel materials (SiGe, III-V, MRAM, etc.) or disruptive, new technology approaches (Photonics packaging, neuromorphic devices, IoT applications, etc.). He is author on more than 90 papers and inventor on more than 25 patents.