Babar A. Khan

Babar A. Khan received the B.S., M.S., and Ph.D. degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, MA, USA, in 1976, 1977, and 1984, respectively. He was with Philips Research from 1984 to 1998, where his work included research on SOI films formed by laser and lamp recrystallization, polysilicon TFT displays, MOCVD of II-VI films, plasma addressed liquid crystal displays (LCDs), high-intensity discharge lamps formed by micromachining, and reflective LCDs on silicon. Since 1998, he has been with IBM Systems and Technology Group, Globalfoundries, Hopewell Junction, NY, USA, working on the development of embedded DRAM across multiple technology nodes, 7 nm FEOL and 3-D technology. His interests include device design, process development, process integration, product de-bugging, and product development.