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Research Interests

Papers共 11 篇Author StatisticsCo-AuthorSimilar Experts

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A 4.13-Ghz UHS Pseudo Two-Port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-Nm FinFET Technology
Jeongkyun Kim,Byungho Yook, Youngo Lee,Taemin Choi, Kyuwon Choi, Chanho Lee, Juchang Lee,Hyeongcheol Kim, Seok Yun, Changhoon Do, Minwoo Kwak, Mijoung Kim,Yunrong Li,Hoyoung Tang, Jaeyoung Kim,Inhak Lee,Dongwook Seo,Sangyeop Baeck
IEEE JOURNAL OF SOLID-STATE CIRCUITSno. 4 (2024): 1216-1224
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A 14nm 128mb Emram Implemented with 17.88mb/mm2 at 0.60V for Auto-G1 Applications
Gyuseong Kang,Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh,Sohee Hwang, Daehyun Jang,Sangyeop Baeck, Sei Seung Yoon
Symposium on VLSI Technologypp.1-2, (2024)
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A 14nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage
Jungmyung Kang,Keonhee Cho, Sekeon Kim,Giseok Kim, Hyunjun Kim,Dongwook Seo,Sangyeop Baeck, Seiseung Yoon, Seong-Ook Jung
2024 IEEE European Solid-State Electronics Research Conference (ESSERC)pp.669-672, (2024)
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A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4nm FinFET Technology
Jeongkyun Kim,Byungho Yook,Taemin Choi, Kyuwon Choi, Chanho Lee,Yunrong Li, Youngo Lee, Seok Yun, Changhoon Do,Hoyoung Tang,Inhak Lee,Dongwook Seo,Sangyeop Baeck
VLSI Technology and Circuitspp.1-2, (2023)
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Author Statistics

#Papers: 11

#Citation: 15

H-Index: 2

G-Index: 3

Sociability: 4

Diversity: 1

Activity: 2

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