Sang-Hoon Shin was born in Seoul, South Korea, in 1976. He received the B.S. and M.S. degree from Sogang University, Seoul, South Korea, all in electrical engineering. In 2004, he joined Hynix Semiconductor Inc., Ichon, South Korea, where he was involved in circuit design for GDDR3 SDRAMs and 3DS DRAMs. In 2013, he joined Samsung Electronics, Hwaseong, South Korea, where he has been involved in circuit design. He has been in charge of DFX architecture and circuit design for HBM. He has authored more than five papers in the field of electronic circuits and he holds more than 15 U.S. patents. His current research interests include high-bandwidth memory, high-density memory, 3D ICs, and DFX.