Je Min Ryu

Je-Min Ryu received the B.S. degree from Hanyang University, Seoul, South Korea, in 2003. In 2003, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in DDR2/DDR3 and high-bandwidth memory (HBM) chip design. His research interests include 3-D-DRAM circuit design and technology, low-power and high-speed DRAM design, and function in memory.