myeongo kim

Myeong-O Kim was born in Seoul, South Korea, in 1972. He received the B.S. degree in electronic materials and devices engineering from Inha University, Incheon, South Korea, in 1998, and the M.S. degree in electronic engineering from Yonsei University, Seoul, in 2007. In 1998, he joined Samsung Electronics Company Ltd., Suwon, Gyeonggi-do, South Korea, as a DRAM Design Engineer, where he has been working on the circuit design of high-speed low-power DRAMs. He is currently the Vice President with Samsung Electronics, where he is responsible for the development of LP/high-bandwidth memory (HBM) DRAM. His interests include design of data center server DRAM and low-power high-bandwidth memory.