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论文共 17 篇作者统计合作学者相似作者

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Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Akira Uedono,Claudia Fleischmann, Jean-Philippe Soulie,Mustafa Ayyad,Jeroen E. Scheerder,Christoph Adelmann,Jun Uzuhashi,Tadakatsu Ohkubo, Koji Michishio,Nagayasu Oshima, Shoji Ishibashi

ACS APPLIED ELECTRONIC MATERIALSno. 8 (2024): 5894-5902

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(Keynote) Epitaxial Si/SiGe Multi-Stacks: from Stacked Nano-Sheet to Fork-Sheet and CFET Devices

Roger Loo, Anjani Akula, Yosuke Shimura,Clement Porret,Erik Rosseel, Thomas Dursap,Andriy Yakovitch Hikavyy,Matteo Beggiato,Janusz Bogdanowicz, Alex Merkulov,Mustafa Ayyad, Han,Olivier Richard, Andrea Impagnatiello, Dong Wang,Keisuke Yamamoto, Tamás Sipőcz, Árpád Kerekes,Hans Mertens,Naoto Horiguchi,Robert Langer

ECS Transactionsno. 2 (2024): 15-28

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NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector

Gaspard Hiblot,Taras Ravsher,Roger Loo,Bhuvaneshwari Yengula Venkata Ramana,Yann Canvel,Nathali Franchina Vergel,Andrea Fantini,Shamin Houshmand Sharifi,Nina Bazzazian,Mustafa Ayyad, Alex Merkulov,Gouri Sankar Kar,Sebastien Couet

IEEE ELECTRON DEVICE LETTERSno. 4 (2023): 614-617

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Low Temperature Selective Growth of Ga-doped and Ga–B Co-Doped Germanium Source/drain for PMOS Devices

Clement Porret,Gianluca Rengo,Mustafa Ayyad,Andriy Hikavyy,Erik Rosseel,Robert Langer,Roger Loo

JAPANESE JOURNAL OF APPLIED PHYSICSno. SC (2023)

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Epitaxial SiGe/Si Multi-Stacks for CFET Devices

Roger Loo,Yosuke Shimura, Anjani Akula,Clement Porret, Alex Merkulov,Mustafa Ayyad,Han Han,Olivier Richard, Andrea Impagnatiello,Andriy Hikavyy

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)

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Low Temperature Epitaxy of in Situ GaDoped Si1-XGex: Dopant Incorporation, Structural and Electrical Properties

Gianluca Rengo,Clement Porret,Andriy Yakovitch Hikavyy, Gitte Coenen,Mustafa Ayyad,Richard J. H. Morris,Simone Pollastri,Danilo Oliveira De Souza,Didier Grandjean,Roger Loo,Andre Vantomme

Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)no. 32 (2022): 1216-1216

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B and Ga Co-Doped Si_1-xGe_x for p-Type Source/Drain Contacts

Gianluca Rengo,Clement Porret,Andriy Hikavyy,Erik Rosseel,Mustafa Ayyad,Richard J. H. Morris,Rami Khazaka,Roger Loo,Andre Vantomme

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY（2022）

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B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

Gianluca Rengo,Clement Porret,Andriy Hikavyy,Erik Rosseel,Mustafa Ayyad,Richard J. H. Morris,Rami Khazaka,Roger Loo,André Vantomme

ECS Journal of Solid State Science and Technologyno. 2 (2022): 024008-024008

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Low Temperature Epitaxy of In Situ GaDoped Si_1-XGe_x: Dopant Incorporation, Structural and Electrical Properties

Gianluca Rengo,Clement Porret,Andriy Yakovitch Hikavyy,Gitte Coenen,Mustafa Ayyad,Richard J. H. Morris,Simone Pollastri,Danilo Oliveira De Souza,Didier Grandjean,Roger Loo,Andre Vantomme

ECS Transactionsno. 4 (2022): 249-259

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(Invited) Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts

Andriy Yakovitch Hikavyy,Clement Porret,Manuel Mencarelli,Roger Loo,Paola Favia,Mustafa Ayyad,Basoene Briggs,Robert Langer,Naoto Horiguchi

ECS Transactionsno. 4 (2021): 139-146

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