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Papers共 73 篇Author StatisticsCo-AuthorSimilar Experts

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Assessment and Optimization of the Cascaded Transistor Method for the Direct Extraction of Access Resistance Components in FinFET and NSFET Devices
Pierre Eyben,An De Keersgieter,Philippe Matagne,Hans Mertens,Thomas Chiarella, Porret, Camila Toledo de Carvalho Cavalcante, Yong Kong Siew,Jerome Mitard,Naoto Horiguchi
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
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Monolithic Complementary Field Effect Transistors (CFET) Demonstrated Using Middle Dielectric Isolation and Stacked Contacts
Steven Demuynck,Victor Vega-Gonzalez,C. Toledo de Carvalho Cavalcante,L. Petersen Barbosa Lima, K. Stiers, C. Sheng, A. Vandooren, M. Hosseini, X. Zhou,Hans Mertens, Thomas Chiarella,Jürgen Bömmels, Roger Loo, E. Rosseel,Clement Porret, Y. Shimura, A. Akula,G. Mannaert, S. Choudhury,V. Brissonneau, E. Dupuy, T. Sarkar, Nathali Franchina-Vergel, A. Peter, Nicolas Jourdan, J. P. Soulie,Kevin Vandersmissen, F. Sebaai, P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar, K. D'Have,B. T. Chan, A. Sepulveda Marquez, R. Langer, I. Gyo Koo,E. Altamirano Sanchez, Katia Devriendt, P. Rincon Delgadillo,F. Lazzarino,Jérôme Mitard,J. Geypen,E. Grieten,D. Batuk, Y.-F. Chen, F. Verbeek,F. Holsteyns, S. Subramanian, N. Horiguchi, S. Biesemans
Symposium on VLSI Technologypp.1-2, (2024)
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Comparative Analysis of Middle Dielectric Isolation (MDI) Integration Approaches in Monolithic Complementary Field Effect Transistors: ‘Mdi-First Vs MDI-Last’
Camila Toledo de Carvalho Cavalcante,Steven Demuynck,Alfonso Sepulveda Marquez, Maria Chistiakova, Subhobroto Choudhury, Geert Mannaert, Farid Sebaai, Maryam Hosseini, Anne Vandooren, Pallavi Puttarame Gowda,Emmanuel Dupuy, BT Chan,Hans Mertens,Jef Geypen,Sujith Subramanian, Lucas Petersen Barbosa Lima, Serge Biesemans,Naoto Horiguchi
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
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Source/Drain Epitaxy for Nanosheet-Based CFET Devices
Erik Rosseel,Clement Porret, Thomas Dursap, Roger Loo,Hans Mertens, Jishnu Ganguly, Ritam Sarkar, Camila Cavalcante,Olivier Richard,Jef Geypen,Brendan Marozas, Daniel Casey,Rami Khazaka,Steven Demuynck,Lucas P. B. Lima,Robert Langer,Serge Biesemans,Naoto Horiguchi
ECS Transactionsno. 2 (2024): 29-36
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(Keynote) Epitaxial Si/SiGe Multi-Stacks: from Stacked Nano-Sheet to Fork-Sheet and CFET Devices
Roger Loo, Anjani Akula, Yosuke Shimura,Clement Porret,Erik Rosseel, Thomas Dursap,Andriy Yakovitch Hikavyy,Matteo Beggiato,Janusz Bogdanowicz, Alex Merkulov,Mustafa Ayyad, Han,Olivier Richard, Andrea Impagnatiello, Dong Wang,Keisuke Yamamoto, Tamás Sipőcz, Árpád Kerekes,Hans Mertens,Naoto Horiguchi,Robert Langer
ECS Transactionsno. 2 (2024): 15-28
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Source-Drain Damage of Monolithic Complementary Field Effect Transistors: A Comprehensive Study of Failure Modes and Mitigation Strategies
Camila Toledo de Carvalho Cavalcante,Steven Demuynck,Emmanuel Dupuy,Thomas Chiarella, BT Chan, Pallavi Puttarame Gowda, Il Gyo Koo,Hans Mertens, Anne Vandooren, Farid Sebaai,Jef Geypen,Sujith Subramanian, Lucas Petersen Barbosa Lima, Serge Biesemans,Naoto Horiguchi
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
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Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet Nfets Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration
Hiroaki Arimura,Hans Mertens, Jacopo Franco, L. Lukose, W. Maqsood,S. Brus, Thomas Chiarella, A. Impagnatiello, S. Homkar, V. K. Mootheri, C. Yin, G. Alessio Verni,M. Givens,L. Petersen Barbosa Lima, S. Biesemans, N. Horiguchi
Symposium on VLSI Technologypp.1-2, (2024)
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Demonstration of Poly Gate Cut Process at Tight Gate Pitch of 50nm and High Gates Aspect Ratio for Advanced Device Architectures
Xiuju Zhou, Zheng Tao,Hans Mertens, Emmanuel Dupuy,Anabela Veloso, Boon Teik Chan, Sujith Subramanian, Naoto Horiguchi, Serge Biesemans, Elisabeth Camerotto, Haseeb Kazi, Ziad El Otell
Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials (2024)
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Author Statistics

#Papers: 74

#Citation: 659

H-Index: 12

G-Index: 25

Sociability: 6

Diversity: 0

Activity: 1

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