Kosuke Yanagidaira - KIOXIA | 人才画像

基本信息

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职业迁徙

个人简介

Kosuke Yanagidaira was born in Niigata, Japan, in 1979. He received the B.E. and M.E. degrees in electronic engineering from Chuo University, Tokyo, Japan, in 2003 and 2005, respectively. In 2005, he joined the SoC Research and Development Center, Toshiba Corporation, Yokohama, Japan, where he was engaged in the development of nand flash memories. Since 2019, he has been with Kioxia Corporation, Yokohama, where he has been working on the development of 3-D flash memories.

研究兴趣

论文共 17 篇作者统计合作学者相似作者

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A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm² bit density with 3.2Gbps interface and 205MB/s program throughput

M. Sako, T. Nakajima,F. Kono, T. Nakano, M. Fujiu,J. Musha,D. Nakamura,N. Kanagawa, Y. Shimizu,K. Yanagidaira, T. Utsumi, T. Kawano, Y. Hosomura, H. Yabe, M. Kano,H. Sugawara, A. H. Sravan, K. Hayashi, T. Kouchi, Y. Watanabe

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)

引用1浏览0EIWOS引用

7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology

Noboru Shibata,Hironori Uchikawa,Taira Shibuya,Kenri Nakai,Kosuke Yanagidaira, Hirofumi Inoue

2023 IEEE International Memory Workshop (IMW)pp.1-4, (2023)

引用0浏览0EIWOS引用

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm bit density with 3.2Gbps interface and 205MB/s program throughput

Mario Sako, T. Nakajima,Fumihiro Kono, T. Nakano,Masaki Fujiu,Junji Musha,Dai Nakamura,Naoaki Kanagawa, Y. Shimizu,Kosuke Yanagidaira,Tetsuaki Utsumi, T. Kawano,Yoshikazu Hosomura,Hiroki Yabe, M. Kano,Hiroshi Sugawara, A. H. Sravan, K. Hayashi,Toshiyuki Kouchi, Y. Watanabe

VLSI Technology and Circuitspp.1-2, (2023)

引用0浏览0EI引用

A 1-Tb 4b/cell 4-Plane 162-Layer 3D Flash Memory with a 2.4-Gb/s I/O Speed Interface

2022 IEEE International Solid- State Circuits Conference (ISSCC)（2022）

引用10浏览0EIWOS引用

30.4 A 1tb 3b/cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Tsutomu Higuchi,Takuyo Kodama,Koji Kato,Ryo Fukuda,Naoya Tokiwa,Mitsuhiro Abe,Teruo Takagiwa,Yuki Shimizu,Junji Musha,Katsuaki Sakurai,Jumpei Sato,Tetsuaki Utsumi,Kazuhide Yoneya,Yasuhiro Suematsu,Toshifumi Hashimoto,Takeshi Hioka,Kosuke Yanagidaira,Masatsugu Kojima,Junya Matsuno,Kei Shiraishi,Kensuke Yamamoto,Shintaro Hayashi,Tomoharu Hashiguchi,Kazuko Inuzuka,Akio Sugahara,Mitsuaki Honma,Keiji Tsunoda,Kazumasa Yamamoto,Takahiro Sugimoto,Tomofumi Fujimura,Mizuki Kaneko,Hiroki Date,Osamu Kobayashi,Takatoshi Minamoto,Ryoichi Tachibana,Itaru Yamaguchi,Juan Lee,Venky Ramachandra,Srinivas Rajendra,Tianyu Tang,Siddhesh Darne,Jiwang Lee,Jason Li,Toru Miwa,Ryuji Yamashita,Hiroshi Sugawara,Naoki Ookuma,Masahiro Kano,Hiroyuki Mizukoshi,Yuki Kuniyoshi,Mitsuyuki Watanabe,Kei Akiyama,Hirotoshi Mori,Akira Arimizu,Yoshito Katano,Masakazu Ehama,Hiroshi Maejima,Koji Hosono,Masahiro Yoshihara

2021 IEEE International Solid-State Circuits Conference (ISSCC)（2021）

引用21浏览0EIWOS引用

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology

Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Tomoaki Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako,Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date,Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Mizuki Uda,Dai Nakamura,Katsuaki Sakurai,Takahiro Yamashita, Jieyun Zhou,Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto,Masatsugu Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto,Jumpei Sato, Namasivayam Raghunathan, Yee Lih Koh, Shuo Chen,Juan Lee, Hiroaki Nasu,Hiroshi Sugawara, Koji Hosono, Toshiki Hisada,Hiroshi Nakamura

IEEE journal of solid-state circuits（2020）

引用76浏览0EIWOS引用

13.1 A 1.33tb 4-Bit/cell 3D-Flash Memory on a 96-Word-line-layer Technology