Ilho Myeong - Inter-University Semiconductor Research Center, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea

基本信息

Career Trajectory

Bio

Ilho Myeong received the B.S. degree from the School of Electronics and Information Engineering, Korea Aerospace University, Goyang, South Korea, in 2015. He is currently pursuing the Ph.D. degree with the Department of Electrical Engineering, Seoul National University, Seoul, South Korea.

Research Interests

Papers共 28 篇Author StatisticsCo-AuthorSimilar Experts

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Strategies for a Wide Memory Window of Ferroelectric FET for Multilevel Ferroelectric VNAND Operation

Ilho Myeong,Hyoseok Kim, Seunghyun Kim,Suhwan Lim, Kwangsu Kim,Wanki Kim,Daewon Ha,Sujin Ahn,Jaihyuk Song

IEEE ELECTRON DEVICE LETTERSno. 7 (2024): 1185-1188

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In-depth Analysis of the Hafnia Ferroelectrics As a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling

Giuk Kim,Hyojun Choi,Hunbeom Shin, Sangho Lee, Sangmok Lee,Yunseok Nam,Minhyun Jung,Ilho Myeong, Kijoon Kim,Jongho Woo,Suhwan Lim, Kwangsoo Kim, Wanki Kim,Daewon Ha, Jinho Ahn,Sanghun Jeon

Symposium on VLSI Technologypp.1-2, (2024)

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A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND

Ilho Myeong,Suhwan Lim,Taeyoung Kim,Sanghyun Park,Suseong Noh,Seung Min Lee,Jongho Woo,Hanseung Ko,Youngji Noh, Munkang Choi,Kiheun Lee,Sangwoo Han, Jongyeon Baek,Kijoon Kim,Dongjin Jung,Jisung Kim,Jaewoo Park, Seunghyun Kim,Hyoseok Kim, Ilyoung Yoon,Jaeho Kim, Kwangsoo Kim, Kwangmin Park,Bong Jin Kuh,Wanki Kim, Daewon Ha,Sujin Ahn,Jaihyuk Song,Sijung Yoo,Hyun Jae Lee,Duk-Hyun Choe,Seung-Geol Nam,Jinseong Heo

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

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Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET

Taeyoung Kim,Suhwan Lim,Ilho Myeong,Sanghyun Park,Suseong Noh,Seung Min Lee,Jongho Woo,Hanseung Ko,Youngji Noh, Moonkang Choi,Kiheun Lee,Sangwoo Han, Jongyeon Baek,Kijoon Kim,Dongjin Jung,Ji-sung Kim,Jaewoo Park, Seunghyun Kim,Hyoseok Kim,Sijung Yoo,Hyun Jae Lee,Duk-Hyun Choe,Seung-Geol Nam, Ilyoung Yoon,Chaeho Kim, Kwangsoo Kim, Kwangmin Park,Bong Jin Kuh,Jinseong Heo,Wanki Kim,Daewon Ha,Jaihyuk Song

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 (2024)

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A Comprehensive Study of Transient Characteristics in FeFET Using In-Situ Vt Measurement Method

Ilho Myeong,Hyoseok Kim,Wanki Kim,Daewon Ha,Sujin Ahn,Jaihyuk Song

IEEE ELECTRON DEVICE LETTERSno. 8 (2024): 1457-1460

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Comprehensive Design Guidelines of Gate Stack for QLC and Highly Reliable Ferroelectric VNAND

Suhwan Lim,Taeyoung Kim,Ilho Myeong,Sanghyun Park,Suseong Noh,Seung Min Lee,Jongho Woo,Hanseung Ko,Youngji Noh, Moonkang Choi,Kiheun Lee,Sangwoo Han, Jongyeon Baek,Kijoon Kim,Juhyung Kim,Dongjin Jung, Kwangsoo Kim,Sijung Yoo,Hyun Jae Lee,Seung-Geol Nam,Ji-Sung Kim,Jaewoo Park,Chaeho Kim, Seunghyun Kim,Hyoseok Kim,Jinseong Heo, Kwangmin Park,Sanghun Jeon,Wanki Kim,Daewon Ha,Yu Gyun Shin,Jaihyuk Song

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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TFET-based Memory Cell Design with Top-Down Approach

Young Suh Song, Young-Jae Song,T.S. Arun Samuel,P. Vimala,Shubham Tayal,Ritam Dutta,Chandan Kumar Pandey,Abhishek Upadhyay,Ilho Myeong,Shiromani Balmukund Rahi

CRC Press eBooks（2023）

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Incorporating Bottom-Up Approach into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications

Shubham Tayal,Billel Smaani,Shiromani Balmukund Rahi,Abhishek Kumar Upadhyay,Sandip Bhattacharya,J. Ajayan,Biswajit Jena,Ilho Myeong,Byung-Gook Park,Young Suh Song

IEEE transactions on electron devices/IEEE transactions on electron devices（2022）

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Study on Self-Heating Effect and Lifetime in Vertical-Channel Field Effect Transistor

Ilho Myeong,Hyungcheol Shin

MICROELECTRONICS RELIABILITY（2021）

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A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models

Ilho Myeong,Juhyun Kim,Hyungwoo Ko,Ickhyun Song, Yongseok Kim,Hyungcheol Shin

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems（2020）

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