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Research Interests

Papers共 81 篇Author StatisticsCo-AuthorSimilar Experts

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Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel Via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer
Sijung Yoo,Donghoon Kim,Duk-Hyun Choe, Hyun Jae Lee, Yunseong Lee,Sanghyun Jo,Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang-Hee Lee, Jee-Eun Yang, Sangwook Kim,Seung-Geol Nam
Symposium on VLSI Technologypp.1-2, (2024)
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Author Statistics

#Papers: 81

#Citation: 3273

H-Index: 24

G-Index: 57

Sociability: 6

Diversity: 3

Activity: 18

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