Byung-Kyu Ho

Byung-Kyu Ho received the B.S. degree from Chung-Ang University, Seoul, South Korea in 2009. In 2009, he joined the Memory Division, Samsung Electronics, Hwaseong, South Korea, where he has been involved in DRAM circuit design. He has been involved in various DRAM products such as DDR2, DDR3, LPDDR4, HBM2, and HBM2E over ten years. His research interests include high-speed data path and efficient test mode.