The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
IEEE transactions on nuclear science（2023）
关键词
Silicon germanium,Carbon,Doping,Transient analysis,Silicon,Performance evaluation,Boron,Bulk traps,pulsed-laser testing,SiGe heterojunction bipolar transistors (HBTs),single-event effects,single-event transients (SETs)
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