Vibhor Jain - IBM;c;Essex Junction | 人才画像

基本信息

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职业迁徙

个人简介

Vibhor Jain received the Ph.D. degree in electrical engineering from the University of California, Santa Barbara, CA, USA, in 2011. His dissertation focused on design, fabrication, and characterization of high-speed InP DHBTs for THz electronics. He is currently with the SiGe Technology Development Group, GLOBALFOUNDRIES, Essex Junction, VT, USA, as an HBT Device Engineer. His work is focused on the design and development of SiGe BiCMOS technologies for mm-wave, WiFi, and cellular communication applications.

研究兴趣

论文共 82 篇作者统计合作学者相似作者

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Design of PNP SiGe HBTs Towards 200 GHz Fmax

Uppili Raghunathan,Steven Shank, Sarah McTaggart, Megan Lydon-Nuhfer,Cameron Luce,Ramsey Hazbun, Stephen Bosley, Aaron Vallett, Daisy Dillon,Saurabh Sirohi, Jeffrey B. Johnson, Alexander Derrickson,Vibhor Jain, John Jack Pekarik

ECS Transactionsno. 2 (2024): 75-82

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The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

Adrian Ildefonso,Joel M. Hales,Ani Khachatrian,Jeffrey W. Teng,George N. Tzintzarov,Delgermaa Nergui,Brett L. Ringel,Uppili Raghunathan,Vibhor Jain,John D. Cressler,Dale McMorrow

IEEE transactions on nuclear scienceno. 8 (2023): 1797-1804

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Bipolar Transistor Structure with Collector on Polycrystalline Isolation Layer and Methods to Form Same

J. Holt,Vibhor Jain, J. B. Johnson,John J. Pekarik

OSTI OAI (US Department of Energy Office of Scientific and Technical Information) (2023)

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The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs

Harrison P. Lee,Nelson E. Sepulveda-Ramos,Jeffrey W. Teng,Jackson P. Moody,Delgermaa Nergui,Brett L. Ringel,Zachary R. Brumbach, Alizeh Premani,Uppili S. Raghunathan,Vibhor Jain,John D. Cressler

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTSpp.253-256, (2023)

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Design Trade-offs Between Series-Peaking Inductor and High $f_t$ SiGe HBTs in Transimpedance Amplifiers

Prateek Kumar Sharma,Vaibhav Ruparelia,Saurabh Sirohi,Uppili S. Raghunathan,Venkata Vanukuru,Vibhor Jain

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (2023)

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Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with Ft/fmax of 340/410 GHz

U. S. Raghunathan, S. Sirohi, V. Ruparelia,P. K. Sharma,D. P. Ioannou,V. Jain, H. K. Kakara, S. Gedela,V. Vanukuru,P. Dongmo, C. Luce, R. Hazbun,R. Krishnasamy,J. Hwang, M. Levy,K. Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky,A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson,R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton,J. Pekarik, Q. Liu

2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTSpp.232-235, (2022)

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415/610GHz f_T/f_MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process