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Gate length scaling beyond Si: Mono-layer 2D Channel FETs Robust to Short Channel Effects

C. J. Dorow,A. Penumatcha, A. Kitamura,C. Rogan,K. P. O'Brien,S. Lee,R. Ramamurthy, C-Y Cheng,K. Maxey, T. Zhong,T. Tronic,B. Holybee, J. Richards,A. Oni,C-C Lin,C. H. Naylor,N. Arefin,M. Metz,R. Bristol,S. B. Clendenning,U. Avci

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM（2022）

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