Uygar E. Avci

基本信息

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职业迁徙

个人简介

Uygar E. Avci received the B.S. degree in physics and electrical engineering from Boğaziçi University, Istanbul, Turkey, in 1999, and the Ph.D. degree in applied physics from Cornell University, Ithaca, NY, USA, in 2005. He is currently leading Advanced Device Research at Intel’s Components Research. He has coauthored more than 40 journal papers and conference proceedings and has filed 100 patents. Currently, his group is responsible for delivering new transistor and memory device technologies with an eye toward bridging device-physics-based understanding, testing, and experimental realities to improve circuit power, performance, and scaling of semiconductor technology. Dr. Avci was an Associate Editor of the IEEE Transactions on Electron Devices. He is also the Committee Chair for IEDM Emerging Device and Compute Technology.

研究兴趣

论文共 87 篇作者统计合作学者相似作者

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Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 P-Type High-Performance Transistors

Punyashloka Debashis, Hojoon Ryu, Rachel Steinhardt,Pratyush Buragohain,John J. Plombon,Kirby Maxey,Kevin P. O'Brien,Raseong Kim,Arnab Sen Gupta,Carly Rogan, Jennifer Lux,I-Cheng Tung,Dominique Adams, Melisa Gulseren,Ashish Verma Penumatcha,Shriram Shivaraman,Hai Li, Ting Zhong, Shane Harlson,Tristan Tronic,Adedapo Oni, Steve Putna,Scott B. Clendenning,Matthew Metz,Marko Radosavljevic,Uygar Avci,Ian A. Young

NANO LETTERSno. 40 (2024): 12353-12360

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Advanced EUV Patterning of 2D TMDs for CMOS Integration

Vina Faramarzi,Etienne de Poortere, Syam Parayil Venugopalan, Pieter Woltgens,Youngtag Woo,Mark van de Kerkhof, Pawan Kumar,Henry Medina Silva,Pierre Morin,Inge Asselberghs,Chelsey Dorow,Kevin O'Brien,Kirby Maxey,Uygar Avci

NOVEL PATTERNING TECHNOLOGIES 2024 (2024)

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Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length

W. Mortelmans, P. Buragohain, C. Rogan, A. Kitamura, C. J. Dorow,K. P. O'Brien,R. Ramamurthy, J. Lux, T. Zhong, S. Harlson, E. Gillispie, T. Wilson,Adedapo Oni,A. Penumatcha, M. S. Kavrik,K. Maxey, A. Kozhakhmetov, C. C. Lin, S. Lee, A. Vyatskikh,N. Arefin, P. Fischer, J. Kevek,T. Tronic, M. Metz, S. B. Clendenning,U. Avci

Symposium on VLSI Technologypp.1-2, (2024)

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Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS

S.-C. Chang, C. Neumann, B. Granados Alpizar, S. Atanasov, J. Peck,N. Kabir, Y.-C. Liao,S. Shivaraman, Wriddhi Chakraborty,N. Haratipour, I-Cheng Tung, V. Nikitin, G. Allen, T. Hoff,A. Oni,T. Tronic, A. Roy, H. Li, F. Hamzaoglu, M. Metz, I. Young,J. Kavalieros,U. Avci

Symposium on VLSI Technologypp.1-2, (2024)

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Endurance-Aware Compiler for 3-D Stackable FeRAM As Global Buffer in TPU-Like Architecture

Yuan-Chun Luo,Anni Lu,Yandong Luo,Sou-Chi Chang,Uygar Avci,Shimeng Yu

IEEE Transactions on Very Large Scale Integration (VLSI) Systemspp.1-8, (2024)

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High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling

A. Penumatcha,K. P. O’Brien,K. Maxey, W. Mortelmans, R. Steinhardt, S. Dutta,C. J. Dorow, C. H. Naylor A., Kitamura Kitamura, T. Zhong,T. Tronic, P. Buragohain,C. Rogan, C-C. Lin, M. Kavrik, J. Lux,A. Oni, A. Vyatskikh,S. Lee,N. Arefin, P. Fischer, S. Clenndenning,M. Radosavljevic,M. Metz,U. Avci

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses