Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

S. Mochizuki,B. Colombeau,L. Yu,A. Dube,S. Choi,M. Stolfi,Z. Bi, F. Chang, R. A. Conti, P. Liu, K. R. Winstel,H. Jagannathan, H. -J. Gossmann,N. Loubet,D. F. Canaperi,D. Guo,S. Sharma,S. Chu, J. Boland,Q. Jin, Z. Li, S. Lin,M. Cogorno,M. Chudzik,S. Natarajan, D. C. McHerron,B. Haran

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2018）

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关键词

improved performance,current state-of-the-art SDE formation,short channel effect,Source / Drain lateral recess,optimum device gain,ultimate nSDE formation,next generation CMOS devices,Source Drain Extension formation,scaled FinFET devices,novel Source Drain Extension approach,NMOS device,epitaxially grown As doped Si,logic ground rules,advanced arsenic doped epitaxial growth,size 10.0 nm,Si

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