CVD Co and its application to Cu damascene interconnections

Takeshi Nogami,J A Maniscalco,Anita Madan,P Flaitz,P Dehaven,C Parks,L Tai,B St Lawrence,R Davis,Robert C Murphy,T Shaw, Sander M Z Cohen,C K Hu,C Cabral,S Chiang,J Kelly,Mary Zaitz, J Schmatz,Sujin Choi,K Tsumura,C D Penny,H C Chen, D Canaperi,Tuan Vo, F Ito,Oscar Van Der Straten,Andrew H Simon,S H Rhee,B Y Kim,T Bolom,V Ryan,P Ma,J Ren,J Aubuchon, Jason H Fine,P Kozlowski, T Spooner,Daniel C Edelstein

Interconnect Technology Conference（2010）

引用 34|浏览11

暂无评分

关键词

chemical vapour deposition,electromigration,integrated circuit interconnections,nanotechnology,aes,afm,cvd co,cu,cu damascene interconnection,sims,xrd,agglomeration resistance,copper film texture,diffusion barrier,electromigration lifetime,micro-analytical technique,nano-scale copper interconnects,post-cmp defect density,triangular voltage sweep,microelectronics,annealing,oxidation,testing,resistance,cobalt,films,impurities,copper

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要