High Performance CMOSFET Technology for 45nm Generation
Digest of Technical Papers 2004 Symposium on VLSI Technology, 2004（2004）
Key words
CMOS integrated circuits,MOSFET,nanotechnology,45 nm,45nm generation,activation process policy,disposable sidewall spacer,high performance CMOSFET technology,high speed annealing technique,roll-off,source and drain extension junction
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