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个人简介
Yoshiaki Toyoshima (M'91) received the B.E degree in electronic engineering from Waseda University, Tokyo, Japan, in 1981.
He joined the Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan, in 1984, where he worked on the advanced CMOS device design and process development for ultralarge-scale integration. His main research area has been in scaled CMOS technology, including device reliability, gate stack technology, and shallow junction technology. In 2002, he participated in the joint development of high-speed silicon-on-insulator CMOS technology with IBM Corporation and Sony Corporation as a Project Leader from Toshiba. Since 2006, he has been managing the Advanced CMOS Technology Department, Toshiba Corporation, Yokohama, Japan.
Mr. Toyoshima is a member of the IEEE Electron Devices Society.
研究兴趣
论文共 85 篇作者统计合作学者相似作者
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H. Sasaki, A. Mochizuki, Y. Sugiura,R. Hasumi,K. Eda, Y. Egawa, H. Yamashita, K. Honda,T. Ohguro,H. S. Momose, H. Ootani,Y. Toyoshima, T. Asami
Japanese journal of applied physicsno. 4S (2011): 04DC15-04DC15
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作者统计
#Papers: 85
#Citation: 1514
H-Index: 23
G-Index: 36
Sociability: 6
Diversity: 2
Activity: 0
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