A Monte Carlo Simulation of Electron Transport in Cu Nano-Interconnects: Suppression of Resistance Degradation Due to Ler/Lwr

Takashi Kurusu,Hiroyoshi Tanimoto,Makoto Wada,Atsunobu Isobayashi,Akihiro Kajita,Nobutoshi Aoki,Yoshiaki Toyoshima

2012 International Electron Devices Meeting（2012）

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摘要

The effect of Line-Edge Roughness (LER) on electrical resistance in nanoscale Cu wires is investigated utilizing a semi-classical Monte Carlo method for simulating electron transport in metallic wires. Dependence of parameters characterizing LER such as amplitude, correlation length, and correlation between line-edges on electrical resistance is presented, and an optimal wire structure to suppress resistance degradation due to LER/LWR is discussed.

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关键词

Monte Carlo methods,copper,electric resistance,electron transport theory,integrated circuit interconnections,nanoelectronics,wires (electric),LER,LWR,Monte Carlo simulation,amplitude,copper nanointerconnects,correlation length,electrical resistance,electron transport,line-edge roughness,metallic wires,nanoscale copper wires,optimal wire structure,resistance degradation suppression,semiclassical Monte Carlo method

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