Yoshiaki Fukuzumi

Yoshiaki Fukuzumi was born in Kamakura, Japan, in 1971. He received the B.S. and M.S. degrees in applied physics from Tokyo University, Tokyo, Japan, in 1994 and 1996, respectively. In 1996, he joined the ULSI Device Engineering Laboratory, Toshiba Corporation, Yokohama, Japan, where he was engaged in the development of DRAM with stacked MIM capacitor using (Ba, Sr)TiO3 or Ta2O5 as the dielectrics. In 1998, he joined the Fujitsu/Toshiba/Winbond DRAM project for the development of 0.13-$\mu\hbox{m}$ FCRAM with MIM capacitor technology in Yokohama. In 2002, he worked on the floating body cell memory to demonstrate its functionality as embedded DRAM on SOI. In 2002, he joined the NEC-Toshiba MRAM development project and was engaged in the integration of magnetic tunnel junctions into the CMOS process. From 2005 to 2006, he studied resistive RAM material and its switching phenomena as a Visiting Scholar at Stanford University, Stanford, CA. He is currently with the Device Process Development Center, Toshiba Corporation, working on the research and development of bit-cost scalable (BiCS) Flash memory as one of the candidates for high-density and low-cost 3-D nonvolatile memory.