Xianbo Yang (S’10) received the B.S. degree in microelectronics from Tianjin University, Tianjin, China, in 2008, and the M.S. and Ph.D. degrees in electrical engineering from Michigan State University, East Lansing, MI, USA, in 2011 and 2014, respectively. He is currently with IM Flash Technologies (a joint venture of Intel and Micron), Lehi, UT, USA, as an Electrical Failure Analysis Engineer, and is actively involved in novel failure analysis technique development and advanced material characterizations for 3-D Xpoint and NAND flash memory products. His Ph.D. research focused on high frequency and terahertz (THz) technology, including circuitry design and simulations, low-loss material fabrication and characterizations, and large-area low-cost novel fabrication process development for active and passive components of THz integrated circuits as well as nanomaterial (nanowire, carbon nanotubes) based devices. He has accomplished several new techniques to realize large-area, low-cost, and low-temperature compatible nano and microfabrication process for both active and passive THz devices during his Ph.D. research.