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个人简介
Tapas Ganguli obtained his B. Tech (Engineering Physics) and M. Tech (Microelectronics) from the Indian Institute of Technology, Powai, Mumbai in 1994 and 1996 respectively. Since 1996, he has been with the Raja Ramanna Centre for Advanced Technology (RRCAT) where he has worked on several topics, prominent among them being on Pulsed Laser Deposition of semiconductors and insulators, Raman spectroscopy of semiconductor thin film, MOVPE growth of semiconductor materials and development of semiconductor lasers. He obtained his Ph.D.degree in 2006 on his work on Pulsed Laser Deposition of ZnSe. His current research interests include, development of semiconductor lasers, growth of III-Nitride semiconductors, and High Resolution XRD studies of epitaxial thin films.
研究兴趣
论文共 151 篇作者统计合作学者相似作者
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Abhishek Chatterjee, Vishal Agnihotri, S. Porwal, S. Khan,Kiran Baraik,Tapas Ganguli, A. Bose, S. Raghavendra, V. K. Dixit, T. K. Sharma
APPLIED SURFACE SCIENCE (2024)
Abhishek Chatterjee, Vishal Agnihotri, S. Porwal, S. Khan,Kiran Baraik,Tapas Ganguli, A. Bose, S. Raghavendra, V.K. Dixit, T.K. Sharma
Applied Surface Science (2024): 160861
Journal of physical chemistry C/Journal of physical chemistry Cno. 36 (2022): 15405-15414
Journal of physics D, Applied physicsno. 18 (2022): 185304-185304
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作者统计
#Papers: 157
#Citation: 2059
H-Index: 24
G-Index: 37
Sociability: 6
Diversity: 0
Activity: 1
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