Tangsheng Chen

Tangsheng Chen was born in Hubei, China, in 1964. He received the B.S. and M.S. degrees in semiconductor physics and devices from Xi’an Jiaotong University (XJTU), Xi’an, China, in 1986 and 1989, respectively. He joined the Nanjing Electronic Devices Institute (NEDI), Nanjing, China, in 1989, where he has made major contributions to the development of compound semiconductor devices, including GaAs-based HEMTs and GaN HEMTs. He is currently the Principal Engineering Fellow and the Technical Director of compound semiconductor technology with NEDI.