Takahiro Shinada - Center for Innovative Integrated Electronic Systems (CIES), Tohoku University

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论文共 66 篇作者统计合作学者相似作者

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Real-Time Nuclear Magnetic Resonance Detection Using Maximum Likelihood Estimation with Single-Shallow-Nitrogen-Vacancy Centers in Quantum Heterodyne Measurements

Akirabha Chanuntranont,Daiki Saito,Kazuki Otani, Tomoki Ota,Yuki Ueda,Masato Tsugawa,Shuntaro Usui,Yuto Miyake,Tokuyuki Teraji,Shinobu Onoda,Takahiro Shinada,Hiroshi Kawarada,Takashi Tanii

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2024)

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Enhancing Room-temperature Photoluminescence from Erbium-doped Silicon by Fabricating Nanopillars in a Silicon-on-Insulator Layer

Yuma Takahashi, Tomoki Ishii, Kaisei Uchida, Takumi Zushi, Lindsay Coe,Shin-ichiro Sato,Enrico Pratic,Takahiro Shinada,Takashi Tanii

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGYno. 4 (2023): 262-266

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Enhancing Photon Collection from Single Shallow Nitrogen-Vacancy Centers in Diamond Nanopillars for Quantum Heterodyne Measurements

Akirabha Chanuntranont,Kazuki Otani,Daiki Saito,Yuki Ueda,Masato Tsugawa,Shuntaro Usui,Yuto Miyake,Tokuyuki Teraji,Shinobu Onoda,Takahiro Shinada,Hiroshi Kawarada,Takashi Tanii

APPLIED PHYSICS EXPRESS（2023）

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Detecting Nuclear Spins in an Organosilane Monolayer Using Nitrogen-Vacancy Centers for Analysis of Precursor Self-Assembly on Diamond Surface

Yuki Ueda,Yuto Miyake,Akirabha Chanuntranont,Kazuki Otani,Masato Tsugawa,Daiki Saito,Shuntaro Usui,Tokuyuki Teraji,Shinobu Onoda,Takahiro Shinada,Hiroshi Kawarada,Takashi Tanii

JAPANESE JOURNAL OF APPLIED PHYSICS（2023）

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Single‐Ion Implantation: Position‐Controlled Functionalization of Vacancies in Silicon by Single‐Ion Implanted Germanium Atoms (adv. Funct. Mater. 21/2021)

Simona Achilli,Nguyen H. Le,Guido Fratesi,Nicola Manini,Giovanni Onida,Marco Turchetti,Giorgio Ferrari,Takahiro Shinada,Takashi Tanii,Enrico Prati

Advanced Functional Materials（2021）

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Electroluminescence and Electrical Conduction Characteristics Measurement of Er/O Co-Doped Si Diode Incorporating Nanopillar Structure

Ryo Furuse, Tatsuo Fujimoto,Keinan Gi,Ayman Abdelghafar,Maasa Yano, Yuki Chiba,Enrico Prati,Michele Celebrano, Shin Sato,Takahiro Shinada,Tanii Takashi

The Japan Society of Applied Physics（2021）

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Quantum Transport Through a Disordered Array of Ge-vacancy Defects in Silicon for Application in Quantum Technologies

Simona Achilli,Nguyen H. Le,Guido Fratesi,Nicola Manini,Giovanni Onida,Marco Turchetti,Giorgio Ferrari,Takahiro Shinada,Takashi Tanii,Enrico Prati

2021 SILICON NANOELECTRONICS WORKSHOP (SNW)pp.87-88, (2021)

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Position-Controlled Functionalization of Vacancies in Silicon by Single-Ion Implanted Germanium Atoms

Simona Achilli,Nguyen H. Le,Guido Fratesi,Nicola Manini,Giovanni Onida,Marco Turchetti,Giorgio Ferrari,Takahiro Shinada,Takashi Tanii,Enrico Prati

ADVANCED FUNCTIONAL MATERIALS（2021）

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Single Ion Implanted Silicon Devices Towards Few Photons Emission Regime for Space Quantum Communications

Enrico Prati,Takahiro Shinada,Takashi Tanii

OSA Quantum 20 Conference (2020)

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Electroluminescence of Er:O-doped Nano Pn Diode in Silicon-on-insulator and Its Current-Voltage Characteristics at Room Temperature

Takafumi Fujimoto,Keinan Gi,Stefano Bigoni,Michele Celebrano,Marco Finazzi,Giorgio Ferrari,Takahiro Shinada,Enrico Prati,Takashi Tanii

2020 IEEE Silicon Nanoelectronics Workshop (SNW)（2020）

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