My Research on Diamond Devices:
Due to its extreme properties, diamond is expected to be the ultimate semiconductor device. However, its progress as an active device has been slow because there has been no doping technology developed to realize its high electrical conductance. We focused on surface accumulation layer appearing on a hydrogen terminated diamond surface and developed surface channel field effect transistors (FETs). This type of FET is applicable in high-frequency devices operating at high power, in-plane-gate FETs for nanoelectronics, and biosensors in electrolyte solution.