Seshadri Subbanna

Seshadri Subbanna (M'89) received the B.Tech. degree in electrical engineering from the Indian Institute of Technology, Bombay, and the M.S.E.E. and Ph.D. degrees in electrical engineering and materials science from the University of California at Santa Barbara. His doctoral work was on optical and electronic properties of antimonide superlattices and heterostructures, including the first observation of quadratic piezo-electro-optic effect in strained superlattices. From 1989 to 2002, he was with IBM Microelectronics Division, East Fishkill, NY. Since joining IBM, he has worked on advanced bipolar and CMOS processes, high-density SRAM development, and BiCMOS technology. From 1996 to 2002, he was Manager of advanced SiGe HBT BiCMOS development at the IBM Microelectronics Semiconductor Research and Development Center. This group was the first to achieve over 200-GHz high-frequency performance in a silicon-based technology, and his group is recognized worldwide as a leader in development of high-speed networking technology. He was also a Senior Business Counsel charged with intellectual property development and patent generation. Currently, he is on assignment with the IBM Systems Group (previously, IBM Server Group). He has given many invited talks and has over 50 publications and 20 patents.