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个人简介
Serguei A. Chevtchenko received the Diploma degree in solid state physics from Moscow Engineering Physics Institute, Moscow, Russia, in 1998, and the Ph.D. degree in engineering from Virginia Commonwealth University, Richmond, VA, USA, in 2007, where he conducted experimental studies of structural, optical, and electronic properties of wide bandgap semiconductors (GaN and ZnO).
In 2008, he joined Ferdinand-Braun-Institut (FBH), Berlin, Germany. His responsibilities at FBH include the development and technical coordination of processes for the fabrication of GaN-based MMICs and high power microwave transistors as well as the analysis of dc and microwave characterization results. He is involved in the fabrication process and layout optimization of the broadband GaN-based THz detectors and arrays.
研究兴趣
论文共 39 篇作者统计合作学者相似作者
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期刊级别
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Physica status solidi A, Applications and materials scienceno. 16 (2023)
2023 Asia-Pacific Microwave Conference (APMC) (2023)
IEEE microwave and wireless technology lettersno. 10 (2023): 1446-1449
IEEE transactions on electron devices/IEEE transactions on electron devicesno. 12 (2023): 6244-6249
2022 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2022)pp.88-89, (2022)
2022 17th European Microwave Integrated Circuits Conference (EuMIC)pp.149-152, (2022)
Physica status solidi A, Applications and materials scienceno. 8 (2022)
2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) (2021)
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)pp.527-530, (2021)
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作者统计
#Papers: 39
#Citation: 454
H-Index: 12
G-Index: 21
Sociability: 5
Diversity: 2
Activity: 2
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