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个人简介
Joachim Würfl (Member, IEEE) received the Ph.D. degree in electrical engineering from the Technical University of Darmstadt, Germany, in 1989. He joined Ferdinand-Braun-Institut (FBH), in 1992, where he has been responsible for clean room technology, process development, and processing of III/V optoelectronic and microwave devices. In 2007, he was appointed as the Head of the newly implemented research area GaN electronics. In this function, he is managing several projects on GaN-based discrete power devices, X- and Ka-band MMICs, and high voltage power devices, including Galliumoxide technology. He is responsible for design, technological implementation, characterization and reliability testing of these devices. He has authored or coauthored more than 200 papers and holds 27 German and international patents.
研究兴趣
论文共 180 篇作者统计合作学者相似作者
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Oxide-based Materials and Devices XV (2024)
Liad Tadmor,Sofie S. T. Vandenbroucke,Eldad Bahat Treidel,Enrico Brusaterra,Paul Plate, Nicole Volkmer,Frank Brunner,Christophe Detavernier,Joachim Wurfl,Oliver Hilt
JOURNAL OF APPLIED PHYSICSno. 8 (2024)
Journal of vacuum science & technology A Vacuum, surfaces, and filmsno. 4 (2023)
APPLIED PHYSICS LETTERSno. 10 (2023)
Applied Physics Lettersno. 10 (2023)
Physica status solidi A, Applications and materials scienceno. 16 (2023)
2023 Asia-Pacific Microwave Conference (APMC) (2023)
Ultrawide Bandgap β-Ga2O3 Semiconductorpp.1-26, (2023)
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作者统计
#Papers: 184
#Citation: 4135
H-Index: 31
G-Index: 58
Sociability: 6
Diversity: 3
Activity: 18
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