Savannah Eisner

My current research focuses on next-generation wide-bandgap (WBG) semiconductor technologies for extreme environment space exploration, such as a mission to the surface of Venus. My emphasis is on Gallium Nitride (GaN) two-dimensional electron gas (2DEG) devices. Expertise in III-V microfabrication, ohmic and Schottky metallization, high electron mobility transistors (HEMTs), and piezoelectric RF MEMS.