R. Modica - STMicrolectronics | 人才画像

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个人简介

Roberto Modica received the B.S. degree (cum laude) in electronic engineering from the University of Catania, Catania, Italy, in 1998. Since 1998, he has been with the R&D Department, STMicroelectronics, Catania.

研究兴趣

论文共 11 篇作者统计合作学者相似作者

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Drain Voltage Impact on Charge Redistribution in GaN-on-Si E-mode MOSc-HEMTs

C. Leurquin,W. Vandendaele,R. Gwoziecki,B. Mohamad,G. Despesse,F. Iucolano,R. Modica,A. Constant

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS (2023)

引用1浏览0EIWOS引用

Role of Free Holes in Nbti Degradation in GaN-on-Si MOS-channel HEMTs

W. Vandendaele,M. A. Jaud,A. G. Viey,B. Mohamad, C. Le Royer,L. Vauche,A. Constant,R. Modica,F. Iucolano,R. Gwoziecki

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)pp.345-348, (2022)

引用2浏览0EIWOS引用

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

C. Le Royer,B. Mohamad,J. Biscarrat,L. Vauche,R. Escoffier,J. Buckley,S. Becu, R. Riat,C. Gillot,M. Charles,S. Ruel,P. Pimenta-Barros,N. Posseme, P. Besson, F. Boudaa,C. Vannuffel,W. Vandendaele,A. G. Viey,A. Krakovinsky,M. -A. Jaud,R. Modica,F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli,R. Gwoziecki,V. Sousa

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)pp.49-52, (2022)

引用9浏览0EIWOS引用

Reliable Method for Low Field Temperature Dependent Mobility Extraction at Al 2 O 3 /gan Interface

B. Rrustemi,A. G. Viey,M-A Jaud,F. Triozon,W. Vandendaele,C. Leroux,J. Cluzel,S. Martin,C. Le Royer,R. Gwoziecki,R. Modica,F. Iucolano,F. Gaillard,T. Poiroux,G. Ghibaudo

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

引用2浏览0EIWOS引用

Study on the Difference Between ID(VG) and C(VG) Pbti Shifts in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey,W. Vandendaele, M-A Jaud,J. Coignus,J. Cluzel,A. Krakovinsky,S. Martin,J. Biscarrat,R. Gwoziecki,V Sousa,F. Gaillard,R. Modica,F. Iucolano,M. Meneghini,G. Meneghesso,G. Ghibaudo

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

引用5浏览0EIWOS引用

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

M. -A. Jaud,W. Vandendaele,B. Rrustemi,A. G. Viey,S. Martin,C. Le Royer,L. Vauche,S. Martinie,R. Gwoziecki,R. Modica,F. Iucolano,T. Poiroux

IEEE Transactions on Electron Devices（2021）

引用1浏览0EIWOS引用

A Novel Insight on Interface Traps Density (dit) Extraction in GaN-on-Si MOS-c HEMTs

W. Vandendaele,S. Martin, M-A Jaud,A. Krakovinsky,L. Vauche, C. Le Royer,J. Biscarrat,A. G. Viey,R. Gwoziecki,R. Modica,F. Iucolano,M. Plissonnier,F. Gaillard

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）

引用7浏览0EIWOS引用

Investigation of Nbti Degradation on GaN-on-Si E-mode MOSc-HEMT

A. G. Viey,W. Vandendaele,M. -A. Jaud,J. Cluzel,J. -P. Barnes,S. Martin,A. Krakovinsky,R. Gwoziecki,M. Plissonnier,F. Gaillard,R. Modica,F. Iucolano,M. Meneghini,E. Zanoni,G. Meneghesso,G. Ghibaudo

International Electron Devices Meeting（2019）

引用19浏览0EIWOS引用

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