A. G. Viey - LETI, University Grenoble-Alpes

基本信息

浏览量：0

职业迁徙

个人简介

暂无内容

研究兴趣

论文共 12 篇作者统计合作学者相似作者

按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选

Reliability of GaN MOSc-HEMTs: from TDDB to Threshold Voltage Instabilities (Invited)

W. Vandendaele,C. Leurquin,R. Lavieville,M. A. Jaud,A. G. Viey,R. Gwoziecki,B. Mohamad,E. Nowak,A. Constant,F. Iucolano

2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-8, (2023)

引用0浏览0EIWOS引用

Novel High Voltage Bias Temperature Instabilities (HV-BTI) Setup to Monitor RON/VTH Drift on GaN-on-Si E-mode MOSc-HEMTs under Drain Voltage

C. Leurquin,W. Vandendaele,A. G. Viey,R. Gwoziecki,R. Escoffier,R. Salot,G. Despesse

2022 IEEE International Reliability Physics Symposium (IRPS) (2022)

引用3浏览0EIWOS引用

Role of Free Holes in Nbti Degradation in GaN-on-Si MOS-channel HEMTs

W. Vandendaele,M. A. Jaud,A. G. Viey,B. Mohamad, C. Le Royer,L. Vauche,A. Constant,R. Modica,F. Iucolano,R. Gwoziecki

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)pp.345-348, (2022)

引用2浏览0EIWOS引用

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

C. Le Royer,B. Mohamad,J. Biscarrat,L. Vauche,R. Escoffier,J. Buckley,S. Becu, R. Riat,C. Gillot,M. Charles,S. Ruel,P. Pimenta-Barros,N. Posseme, P. Besson, F. Boudaa,C. Vannuffel,W. Vandendaele,A. G. Viey,A. Krakovinsky,M. -A. Jaud,R. Modica,F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli,R. Gwoziecki,V. Sousa

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)pp.49-52, (2022)

引用9浏览0EIWOS引用

Reliable Method for Low Field Temperature Dependent Mobility Extraction at Al 2 O 3 /gan Interface

B. Rrustemi,A. G. Viey,M-A Jaud,F. Triozon,W. Vandendaele,C. Leroux,J. Cluzel,S. Martin,C. Le Royer,R. Gwoziecki,R. Modica,F. Iucolano,F. Gaillard,T. Poiroux,G. Ghibaudo

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

引用2浏览0EIWOS引用

Study on the Difference Between ID(VG) and C(VG) Pbti Shifts in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey,W. Vandendaele, M-A Jaud,J. Coignus,J. Cluzel,A. Krakovinsky,S. Martin,J. Biscarrat,R. Gwoziecki,V Sousa,F. Gaillard,R. Modica,F. Iucolano,M. Meneghini,G. Meneghesso,G. Ghibaudo

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

引用5浏览0EIWOS引用

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

M. -A. Jaud,W. Vandendaele,B. Rrustemi,A. G. Viey,S. Martin,C. Le Royer,L. Vauche,S. Martinie,R. Gwoziecki,R. Modica,F. Iucolano,T. Poiroux

IEEE Transactions on Electron Devices（2021）

引用1浏览0EIWOS引用

A Novel Insight on Interface Traps Density (dit) Extraction in GaN-on-Si MOS-c HEMTs

W. Vandendaele,S. Martin, M-A Jaud,A. Krakovinsky,L. Vauche, C. Le Royer,J. Biscarrat,A. G. Viey,R. Gwoziecki,R. Modica,F. Iucolano,M. Plissonnier,F. Gaillard

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2020）

引用7浏览0EIWOS引用

加载更多

作者统计

合作学者

合作机构

D-Core

合作者
学生
导师

暂无相似学者，你可以通过学者研究领域进行搜索筛选

数据免责声明

页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果，我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问，可以通过电子邮件方式联系我们：report@aminer.cn