P. A. Houston - Department of Electronic and Electrical Engineering, The University of Sheffield

基本信息

Career Trajectory

Bio

Peter A. Houston (M’92) received the B.Sc. (Hons.) and Ph.D. degrees in physics from Strathclyde University, Glasgow, U.K., in 1972 and 1975, respectively. He is currently a Professor of electronic devices with the University of Sheffield, Sheffield, U.K., with a specific research interest in the design and fabrication of GaN-based HEMTs for power switching applications.

Research Interests

Papers共 122 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Dual Metal Gate AlGaN/GaN High Electron Mobility Transistors with Improved Transconductance and Reduced Short Channel Effects

Joseph Pinchbeck,Kean Boon Lee,Sheng Jiang,Peter Houston

Journal of physics D, Applied physics（2020）

Cited4Views0Bibtex

A 624 V 5 A All-GaN Integrated Cascode for Power-Switching Applications

Sheng Jiang,Kean Boon Lee,Joseph Pinchbeck,Yidi Yin,Peter A. Houston

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2020）

Cited0Views0Bibtex

Comparison of Atomic Layer Deposited Al2O3 and (ta2o5)(0.12)(al2o3)(0.88) Gate Dielectrics on the Characteristics of GaN-capped AlGaN/GaN Metal-Oxide-semiconductor High Electron Mobility Transistors

T. Partida-Manzanera,Z. H. Zaidi,J. W. Roberts,S. B. Dolmanan,K. B. Lee,P. A. Houston,P. R. Chalker,S. Tripathy,R. J. Potter

JOURNAL OF APPLIED PHYSICS（2019）

Cited12Views0Bibtex

Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers

Alexander Alt,Hassan Hirshy,Sheng Jiang,Kean Boon Lee,Michael A. Casbon,Peng Chen,Peter A. Houston,Paul J. Tasker,Jonathan Lees

IEEE Transactions on Microwave Theory and Techniques（2019）

Cited13Views0EIWOSBibtex

Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

Sheng Jiang,Kean Boon Lee,Zaffar H. Zaidi,Michael J. Uren,Martin Kuball,Peter A. Houston

IEEE Transactions on Electron Devices（2019）

Cited4Views0EIWOSBibtex

Band Alignments of Sputtered Dielectrics on GaN

S. N. Supardan,P. Das,J. D. Major, A. Hannah,Z. H. Zaidi,R. Mahapatra,K. B. Lee, R. Valizadeh,P. A. Houston,S. Hall,V. R. Dhanak,I. Z. Mitrovic

Journal of physics D, Applied physicsno. 7 (2019): 075303-075303

Cited0Views0Bibtex

Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

Manikant Singh,Serge Karboyan,Michael J. Uren,Kean Boon Lee,Zaffar Zaidi,Peter A. Houston,Martin Kuball

Microelectronics Reliability（2019）

Cited4Views0Bibtex

Nanoscale Structural and Chemical Analysis of F-implanted Enhancement-Mode InAlN/GaN Heterostructure Field Effect Transistors

Fengzai Tang,Kean B. Lee,Ivor Guiney,Martin Frentrup,Jonathan S. Barnard,Giorgio Divitini,Zaffar H. Zaidi,Tomas L. Martin,Paul A. Bagot,Michael P. Moody,Colin J. Humphreys,Peter A. Houston,Rachel A. Oliver,David J. Wallis

Journal of applied physics（2018）

Cited2Views0Bibtex

The 2018 GaN power electronics roadmap

Hiroshi Amano,Y Baines,Matteo Borga, T Bouchet,Paul R. Chalker,M Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere, L Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen, Geoff Haynes,Thomas Heckel,Dilini Hemakumara,P.A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin März,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,E Morvan,A Nakajima,E. M. S. Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,M Plissonnier,Rekha Reddy,Min Sun,I.G. Thayne,A Torres,Nicola Trivellin,V. Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,Jingshan Wang,Jinqiao Xie,S. Yagi,Shu Yang,C. Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang

JOURNAL OF PHYSICS D-APPLIED PHYSICS（2018）

Cited827Views0Bibtex

827

Vertical Leakage Mechanism in GaN on Si High Electron Mobility Transistor Buffer Layers

F. S. Choi,J. T. Griffiths,Chris Ren,K. B. Lee,Z. H. Zaidi,P. A. Houston,I. Guiney,C. J. Humphreys,R. A. Oliver,D. J. Wallis

Journal of applied physics（2018）

Cited26Views0Bibtex

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