基本信息
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职业迁徙
个人简介
Victor Moroz received the M.S. degree in electrical engineering from Novosibirsk Technical University, Siberia, Russia, and the Ph.D. degree in applied physics from the University of Nizhny Novgorod, Nizhny Novgorod, Russia, in 1992.
After engaging in technology development at several semiconductor manufacturing companies and teaching semiconductor physics at the university, he joined Stanford Spin-Off Technology Modeling Associates in 1995. After initial public offering (IPO) in 1997, the Technology Modeling Associates (TMA), Sunnyvale, CA, USA, TCAD Team became a part of Avanti Fremont, CA, USA, in 1998, and in 2002, it became a key part of Synopsys, Mountain View, CA, USA, connecting a synthesis company to the manufacturing. He is currently a Synopsys Fellow, engaged in a variety of projects on modeling advanced CMOS with over 300 granted and pending U.S. and international patents.
Dr. Moroz serves as an Editor for IEEE Electron Device Letters.
研究兴趣
论文共 163 篇作者统计合作学者相似作者
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2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.53-56, (2023)
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.97-100, (2023)
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.53-56, (2023)
Victor Moroz,Jamil Kawa,Xi-Wei Lin,Andrew R. Brown,Plamen Asenov,Jaehyun Lee,Mohit Bajaj, Tyler Michalak,Craig Riddet,Alexei Svizhenko, Renato Hentschke,Søren Smidstrup
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.107-110, (2021)
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021)pp.188-191, (2021)
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作者统计
#Papers: 183
#Citation: 3975
H-Index: 32
G-Index: 54
Sociability: 6
Diversity: 2
Activity: 5
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